MTP75N05HD Motorola, MTP75N05HD Datasheet

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MTP75N05HD

Manufacturer Part Number
MTP75N05HD
Description
TMOS POWER FET
Manufacturer
Motorola
Datasheet

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Designer's
HDTMOS E-FET
Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
withstand high energy in the avalanche and commutation modes.
This new energy–efficient design also offers a drain–to–source
diode with a fast recovery time. Designed for low–voltage,
high–speed switching applications in power supplies, converters
and PWM motor controls, and other inductive loads. The avalanche
energy capability is specified to eliminate the guesswork in designs
where inductive loads are switched, and to offer additional safety
margin against unexpected voltage transients.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s, E–FET and HDTMOS are trademarks of Motorola Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
MAXIMUM RATINGS
Motorola TMOS Power MOSFET Transistor Device Data
Drain–Source Voltage
Drain–Gate Voltage (R GS = 1.0 M )
Gate–Source Voltage — Continuous
Drain Current — Continuous
Drain Current
Drain Current
Total Power Dissipation
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting T J = 25 C
Thermal Resistance — Junction to Case
Thermal Resistance
Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds
This advanced high–cell density HDTMOS E–FET is designed to
Motorola, Inc. 1995
Ultra Low R DS(on) , High–Cell Density, HDTMOS
SPICE Parameters Available
Diode is Characterized for Use in Bridge Circuits
Diode Exhibits High Speed, Yet Soft Recovery
I DSS and V DS(on) Specified at Elevated Temperature
Avalanche Energy Specified
Derate above 25 C
(V DD = 25 Vdc, V GS = 10 Vpk, I L = 75 Apk, L = 0.177 mH, R G = 25 )
— Continuous @ 100 C
— Single Pulse (t p
— Junction to Ambient
(T C = 25 C unless otherwise noted)
Data Sheet
10 s)
Rating
G
D
S
Symbol
T J , T stg
V DGR
V DSS
R JC
R JA
V GS
E AS
I DM
P D
T L
I D
I D
MTP75N05HD
CASE 221A–06, Style 5
TMOS POWER FET
– 55 to 175
R DS(on) = 9.5 m
Motorola Preferred Device
Value
75 AMPERES
1.00
62.5
225
150
500
260
50
50
75
65
1
50 VOLTS
20
TO–220AB
Order this document
by MTP75N05HD/D
Watts
W/ C
Unit
Vdc
Vdc
Vdc
Adc
Apk
C/W
mJ
C
C
1

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MTP75N05HD Summary of contents

Page 1

... Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1995 Data Sheet Rating 10 s) Order this document by MTP75N05HD/D MTP75N05HD Motorola Preferred Device TMOS POWER FET 75 AMPERES R DS(on VOLTS D G CASE 221A– ...

Page 2

... MTP75N05HD ELECTRICAL CHARACTERISTICS OFF CHARACTERISTICS Drain–Source Breakdown Voltage ( 250 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc 150 C) Gate–Body Leakage Current ( CHARACTERISTICS (1) Gate Threshold Voltage ( 250 Adc) Temperature Coefficient (Negative) Static Drain– ...

Page 3

... 100 – 100 120 140 100 125 150 Temperature 2%. MTP75N05HD 160 140 120 100 80 60 100 GATE–TO–SOURCE VOLTAGE (VOLTS) Figure 2. Transfer Characteristics 0.009 ...

Page 4

... MTP75N05HD Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals ( t) are deter- mined by how fast the FET input capacitance can be charged by current from the generator. The published capacitance data is difficult to use for calculat- ing rise and fall because drain– ...

Page 5

... A/ s STANDARD CELL DENSITY 30 HIGH CELL DENSITY – 10 – 20 – 30 – 40 – 120 – 100 – 80 – 60 – 40 – TIME (ns) Figure 11. Reverse Recovery Time ( MTP75N05HD 100 ...

Page 6

... MTP75N05HD The Forward Biased Safe Operating Area curves define the maximum simultaneous drain–to–source voltage and drain current that a transistor can handle safely when it is for- ward biased. Curves are based upon maximum peak junc- tion temperature and a case temperature ( Peak ...

Page 7

... PLANE STYLE 5: PIN 1. GATE CASE 221A–06 ISSUE Y MTP75N05HD NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN A 0 ...

Page 8

... EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4–32–1, Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 8 Motorola TMOS Power MOSFET Transistor Device Data MTP75N05HD/D *MTP75N05HD/D* ...

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