MTP75N05HD Motorola, MTP75N05HD Datasheet
MTP75N05HD
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MTP75N05HD Summary of contents
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... Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1995 Data Sheet Rating 10 s) Order this document by MTP75N05HD/D MTP75N05HD Motorola Preferred Device TMOS POWER FET 75 AMPERES R DS(on VOLTS D G CASE 221A– ...
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... MTP75N05HD ELECTRICAL CHARACTERISTICS OFF CHARACTERISTICS Drain–Source Breakdown Voltage ( 250 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc 150 C) Gate–Body Leakage Current ( CHARACTERISTICS (1) Gate Threshold Voltage ( 250 Adc) Temperature Coefficient (Negative) Static Drain– ...
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... 100 – 100 120 140 100 125 150 Temperature 2%. MTP75N05HD 160 140 120 100 80 60 100 GATE–TO–SOURCE VOLTAGE (VOLTS) Figure 2. Transfer Characteristics 0.009 ...
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... MTP75N05HD Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals ( t) are deter- mined by how fast the FET input capacitance can be charged by current from the generator. The published capacitance data is difficult to use for calculat- ing rise and fall because drain– ...
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... A/ s STANDARD CELL DENSITY 30 HIGH CELL DENSITY – 10 – 20 – 30 – 40 – 120 – 100 – 80 – 60 – 40 – TIME (ns) Figure 11. Reverse Recovery Time ( MTP75N05HD 100 ...
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... MTP75N05HD The Forward Biased Safe Operating Area curves define the maximum simultaneous drain–to–source voltage and drain current that a transistor can handle safely when it is for- ward biased. Curves are based upon maximum peak junc- tion temperature and a case temperature ( Peak ...
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... PLANE STYLE 5: PIN 1. GATE CASE 221A–06 ISSUE Y MTP75N05HD NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN A 0 ...
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... EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4–32–1, Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 8 Motorola TMOS Power MOSFET Transistor Device Data MTP75N05HD/D *MTP75N05HD/D* ...