RFPD2580 RF Micro Devices, RFPD2580 Datasheet

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RFPD2580

Manufacturer Part Number
RFPD2580
Description
45MHz to 1200MHz GaAs/GaN POWER DOUBLER HYBRID
Manufacturer
RF Micro Devices
Datasheet
Features
Applications
DS100428
Excellent Linearity
Superior Return Loss Perfor-
mance
Extremely Low Distortion
Optimal Reliability
Low Noise
Unconditionally Stable Under
All Terminations
Extremely High Output Capa-
bility
22.5dB Min. Gain at
1200MHz
450mA Max. at 24V
45MHz to 1200MHz CATV
Amplifier Systems
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DC
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
RFPD2580
45MHz to
1200MHz
GaAs/GaN
Power Dou-
bler Hybrid
Product Description
The RFPD2580 is a Hybrid Power Doubler amplifier module. The part
employs GaAs pHEMT die and GaN HEMT die, has high output capability,
and operates from 45MHz to 1200MHz. It provides excellent linearity and
superior return loss performance with low noise and optimal reliability.
Ordering Information
RFPD2580
GaAs HBT
GaAs MESFET
InGaP HBT
INPUT
Optimum Technology Matching® Applied
45MHz to 1200MHz GaAs/GaN Power Doubler Hybrid
SiGe BiCMOS
Si BiCMOS
SiGe HBT
45MHz to 1200MHz GaAs/GaN POWER
Functional Block Diagram
+VB
GaAs pHEMT
Si CMOS
Si BJT
RFPD2580
DOUBLER HYBRID
Package: SOT-115J
www.DataSheet4U.com
OUTPUT
GaN HEMT
BiFET HBT
LDMOS
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