RFPP2590 RF Micro Devices, RFPP2590 Datasheet - Page 2

• Manufacturer Part Number: RFPP2590
• Description: 45MHz to 1200MHz GaAs PUSH PULL HYBRID
• Manufacturer: RF Micro Devices

RFPP2590
2 of 3
Absolute Maximum Ratings
RF Input Voltage (single tone)
DC Supply Over-Voltage (5 minutes)
Storage Temperature
Operating Mounting Base Tempera-
Overall
Power Gain
Slope
Flatness of Frequency Response
Input Return Loss
Output Return Loss
Noise Figure
Total Current Consumption (DC)
Distortion Data 40MHz to
550MHz
CTB
XMOD
CSO
CIN
1. The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency.
2. 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +44dBmV flat output level, plus 75 digital channels, -6dB offset relative to the
equivalent analog carrier. Composite Second Order (CSO) - The CSO parameter (both sum and difference products) is defined by the NCTA.
Composite Triple Beat (CTB) - The CTB parameter is defined by the NCTA. Cross Modulation (XMOD) - Cross modulation (XMOD) is measured at baseband
(selective voltmeter method), referenced to 100% modulation of the carrier being tested. Carrier to Intermodulation Noise (CIN) - The CIN parameter is
defined by ANSI/SCTE 17 (Test procedure for carrier to noise).
ture
[1]
Parameter
Parameter
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support, contact RFMD at ([phone] or [e-mail].
Min.
21.5
22.5
1.0
-20
-19
-18
-18
-17
-20
-19
-18
-17
-16
62
-40 to +100
-30 to +100
Rating
Specification
75
30
230.0
Typ.
23.5
1.5
5.5
-64
-60
-70
22
66
Max.
dBmV
240.0
Unit
22.5
24.0
2.0
0.8
6.5
-60
-56
-65
°C
°C
V
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Unit
dBc
dBc
dBc
mA
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
Caution! ESD sensitive device.
V
f=45MHz
f=1200MHz
f=45MHz to 1200MHz
f=320MHz to 640MHz
f=640MHz to 870MHz
f=870MHz to 1000MHz
f=1000MHz to 1200MHz
f=320MHz to 640MHz
f=640MHz to 870MHz
f=870MHz to 1000MHz
f=1000MHz to 1200MHz
f=50MHz to 1200MHz
V
Vo=44dBmV at 550MHz, plus 75 digital channels
(-6dB offset)
f=45MHz to 1200MHz
f=45MHz to 320MHz
f=45MHz to 320MHz
B
B
= 24V, T
= 24V, T
MB
MB
[2]
=30°C, Z
=30°C, Z
Condition
S
S
=Z
=Z
L
L
=75Ω
=75Ω, 79 ch. flat,
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DS100428