MCP98243 Microchip Technology Inc., MCP98243 Datasheet - Page 4

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MCP98243

Manufacturer Part Number
MCP98243
Description
Memory Module Temperature Sensor W/ Eeprom For Spd
Manufacturer
Microchip Technology Inc.
Datasheet

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0
MCP98243
INPUT/OUTPUT PIN DC CHARACTERISTICS (NOTE 1)
DS22153A-page 4
EEPROM DC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, V
T
Power Supply
Operating Voltage Range
Current, EEPROM write
Current, EEPROM read
Power On Reset (POR)
Write Cycle time (byte/page)
Endurance T
Write Protect Voltage
SWP and CWP Voltage
PWP Voltage
Note 1:
Electrical Specifications: Unless otherwise indicated, V
T
Serial Input/Output (SCL, SDA, A0, A1, A2) (Note 2)
Input
Output (SDA only)
Capacitance
SDA and SCL Inputs
Hysteresis
Spike Supression
Note 1:
A
A
= -20°C to +125°C.
= -20°C to +125°C.
High-level Voltage
Low-level Voltage
Input Current
Input Impedance (A0, A1, A2)
Input Impedance (A0, A1, A2)
Low-level Voltage
High-level Current (leakage)
Low-level Current
2:
3:
2:
Parameters
For V
biased and consumes 80 µA (typical) until the sensor POR resets and acknowledges a shutdown
command. See
Characterized but not production tested. For endurance estimates in a specific application, please consult
the Total Endurance™ Model which can be obtained from Microchip’s web site at www.microchip.com.
The range of voltage applied at A0 pin for Permanent Write Protect is GND to V
and Section 5.3.3 “Write Protection”.
These specifications apply for the Temperature Sensor and EEPROM.
For V
biased and consumes 80 µA (typical) until the sensor POR resets and acknowledges a shutdown com-
mand. See
Parameters
A
= +25°C
DD
DD
ranges of 1.8V to the temperature sensor V
ranges of 1.8V to the temperature sensor V
Figure
Figure
2-15.
V
I
I
POR_EE
DD_EE
DD_EE
Sym
V
V
2-15.
t
WC
DD
HV
V
Sym
V
T
I
C
V
Z
Z
I
HYST
V
Min
I
1.8
OH
OL
IN
SP
OL
IH
IN
IN
IL
IN
7
1100
V
Typ
100
1.6
1M
0.7V
3
DD
Min
6
DD
DD
DD
2000
Max
500
5.5
= 1.8V to 5.5V, GND = Ground, and
= 1.8V to 5.5V, GND = Ground and
12
5
0.05V
0.1V
POR_TS
POR_TS
Typ
200
1
5
DD
cycles Number of Write Cycles, V
DD
Unit
ms
µA
µA
V
V
V
V
, the temperature sensor becomes partially
, the temperature sensor becomes partially
0.3V
Max
0.4
±6
50
1
Sensor in Shutdown Mode (for t
(Note 1)
Sensor in Shutdown Mode (Note 1)
EEPROM
(Note 2)
Applied at A0 pin (Note 3)
DD
Units
mA
µA
µA
pF
ns
V
V
V
V
V
© 2009 Microchip Technology Inc.
SDA and SCL only
V
V
I
V
V
V
V
OL
Conditions
DD
IN
IN
OH
OL
DD
DD
= 3 mA
> V
< V
= 0.6V
+ 1V. See
= V
> 2V
< 2V
IH
IL
Conditions
DD
DD
Figure 2-13
= 5V
WC
),

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