MCP65R41 Microchip Technology Inc., MCP65R41 Datasheet - Page 3

• Manufacturer Part Number: MCP65R41
• Manufacturer: Microchip Technology Inc.

1.0
1.1
V
All other inputs and outputs...........V
Difference Input voltage ......................................|V
Output Short Circuit Current .................................... ±25 mA
Current at Input Pins .................................................. ±2 mA
Current at Output and Supply Pins .......................... ±50 mA
Storage temperature ................................... -65°C to +150°C
Ambient temperature with power applied.... -40°C to +125°C
Junction temperature ................................................ +150°C
ESD protection on all pins (HBM/MM)4 kV/200V
ESD protection on MCP65R46 OUT pin (HBM/MM).............
DC CHARACTERISTICS
 2010 Microchip Technology Inc.
4 kV/175V
Unless otherwise indicated, all limits are specified for: V
V
and T
Power Supply
Supply Voltage
Quiescent Current per Comparator
Input
Input Voltage Range
Common-Mode Rejection Ratio
Power Supply Rejection Ratio
Input Offset Voltage
Input Hysteresis Voltage
Input Bias Current
Input Offset Current
Note 1:
DD
DD
- V
T
V
Drift with Temperature
Drift with Temperature
Drift with Temperature
T
/2, V
A
A
DD
A
SS
2:
3:
4:
= +85°C
= +125°C
= -40°C to 125°C.
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
....................................................................... 7.0V
= 5V
IN-
The input offset voltage is the center (average) of the input-referred trip points. The input hysteresis is the
difference between the input-referred trip points.
Limit the output current to Absolute Maximum Rating of 30 mA.
Do not short the output of the MCP65R46 comparators above V
The low power reference voltage pin is designed to drive small capacitive loads. See
Parameters
= V
SS
, R
L
= 100 k to V
SS
– 0.3V to V
DD
V
V
V
/2 (MCP65R41 only), and R
CMRR
PSRR
V
HYST
V
HYST
Sym
V
V
OS
HYST
I
CMR
I
OS
I
I
I
DD
OS
Q
B
B
B
DD
/T
DD
/T
/T
+ 0.3V
- V
2
SS
V
|
SS
Min
-10
1.8
55
50
55
50
63
—
—
—
—
—
—
—
—
1
0.3
DD
Typ
†Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification
is not implied. Exposure to maximum rating conditions
for extended periods may affect device reliability.
2.5
±10
3.3
70
65
70
70
80
±3
50
—
—
—
±1
= +1.8V to +5.5V, V
1
6
5
Pull-Up
V
DD
5000
Max
+10
= 2.74 k to V
5.5
—
—
—
—
—
—
—
—
—
—
—
4
5
+0.3
SS
+ 10V.
µV/°C
µV/°C V
µV/°C V
Units
SS
mV
mV
µA
dB
dB
dB
dB
dB
pA
pA
pA
pA
MCP65R41/6
V
V
= GND, T
DD
2
I
V
V
MCP65R41,
V
MCP65R46,
V
V
V
V
V
V
V
V
V
(MCP65R46 only),
OUT
CM
CM
CM
CM
CM
CM
CM
CM
CM
CM
CM
CM
CM
CM
= V
= -0.3V to 5.3V
= 2.5V to 5.3V
= -0.3V to 2.5V
= -0.3V to 2.5V
= V
= V
= V
= V
= V
= V
= V
= V
= V
= 0
A
Section
Conditions
= +25°C, V
SS
SS
SS
SS
SS
SS
SS
SS
SS
SS
DS22269A-page 3
(Note
(Note
4.5.2.
1)
1)
IN+
=