RJK2061JPE Renesas, RJK2061JPE Datasheet

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RJK2061JPE

Manufacturer Part Number

RJK2061JPE

Description

N-Channel Power MOSFET

Manufacturer

Renesas

Datasheet

1.RJK2061JPE.pdf (7 pages)

Current page: 1 of 7
Download datasheet (180Kb)

RJK2061JPE

Silicon N Channel MOS FET

High Speed Power Switching

Features

• For Automotive application

• AEC-Q101 compliant

• Low on-resistance : R

• Low input capacitance : Ciss = 1850 pF typ

Outline

Absolute Maximum Ratings

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body-drain diode reverse drain current

Body-drain diode reverse drain peak current

Avalanche current

Avalanche energy

Channel dissipation

Channel temperature

Storage temperature

Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%

Thermal Impedance Characteristics

• Channel to case thermal impedance θch-c: 1.0°C/W

R07DS0369EJ0100 Rev.1.00

May 12, 2011

2. Tch = 25°C, Rg ≥ 50 Ω

3. Tc = 25°C

4. AEC-Q101 compliant

RENESAS Package code: PRSS0004AE-B

(Package name: LDPAK(S)-(1) )

Item

DS(on)

1

2

3

= 55 mΩ typ.

4

I

I

DR

D

(pulse)

Pch

Symbol

(pulse)

Tch

E

I

AP

AR

V

V

Tstg

I

GSS

I

DSS

DR

Note2

D

Note2

Note4

Note3

1

Note1

www.DataSheet.co.kr

Note1

G

2, 4

D

S

3

–55 to +150

Preliminary

Value

200

±20

160

160

150

175

40

40

15

15

1. Gate

2. Drain

3. Source

4. Drain

R07DS0369EJ0100

Datasheet

May 12, 2011

Unit

mJ

°C

°C

W

(Ta = 25°C)

V

V

A

A

A

A

A

Page 1 of 6

Rev.1.00

Datasheet pdf - http://www.DataSheet4U.net/

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