PSMN004-25P Philips, PSMN004-25P Datasheet - Page 5

• Manufacturer Part Number: PSMN004-25P
• Description: N-channel logic level TrenchMOS transistor
• Manufacturer: Philips

Philips Semiconductors
October 1999
N-channel logic level TrenchMOS
Fig.9. Normalised drain-source on-state resistance.
100
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
140
120
100
90
80
70
60
50
40
30
20
10
2
1
0
80
60
40
20
0
Fig.8. Typical transconductance, T
-60
0
Normalised On-state Resistance
0
0
Drain current, ID (A)
Transconductance, gfs (S)
VDS > ID X RDS(ON)
Fig.7. Typical transfer characteristics.
VDS > ID X RDS(ON)
-40
0.2 0.4 0.6 0.8
10
-20
20
R
0
DS(ON)
Gate-source voltage, VGS (V)
Junction temperature, Tj (C)
30
20
1
Drain current, ID (A)
/R
I
D
g
1.2 1.4 1.6 1.8
40
40
fs
= f(V
DS(ON)25 ˚C
= f(I
60
50
GS
175 C
D
)
80
)
60
= f(T
100
2
70
2.2 2.4 2.6 2.8
j
)
120
Tj = 25 C
j
80
= 25 ˚C .
140
Tj = 25 C
175 C
90
160
100
180
3
transistor
5
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
100000
2.25
1.75
1.25
0.75
0.25
1.5
0.5
10000
V
1000
2
1
0
Fig.12. Typical capacitances, C
-60
I
C = f(V
GS(TO)
Threshold Voltage, VGS(TO) (V)
D
0
= f(V
0.1
Drain current, ID (A)
Fig.11. Sub-threshold drain current.
VDS = 5 V
-40
Capacitances, Ciss, Coss, Crss (pF)
PSMN004-25B, PSMN004-25P
Fig.10. Gate threshold voltage.
= f(T
-20
GS)
DS
minimum
0.5
); conditions: V
; conditions: T
j
); conditions: I
0
Drain-Source Voltage, VDS (V)
Gate-source voltage, VGS (V)
20
Junction Temperature, Tj (C)
1
1
typical
40
60
minimum
1.5
j
maximum
typical
GS
D
= 25 ˚C; V
80
= 1 mA; V
= 0 V; f = 1 MHz
Product specification
100
maximum
10
2
iss
120
, C
DS
140
DS
oss
2.5
Coss
Crss
Ciss
= V
, C
= V
Rev 1.100
160
GS
rss
GS
100
.
180
3