TK12 Dynex Semiconductor, TK12 Datasheet - Page 3
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TK12
Manufacturer Part Number
TK12
Description
Phase Control Thyristor
Manufacturer
Dynex Semiconductor
Datasheet
1.TK12.pdf
(8 pages)
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DYNAMIC CHARACTERISTICS
GATE TRIGGER CHARACTERISTICS AND RATINGS
www.dynexsemi.com
Symbol
Symbol
I
RRM
dV/dt
V
P
V
dI/dt
V
V
I
P
V
V
V
I
t
FGM
T(TO)
G(AV)
r
I
FGM
RGM
I
GT
FGN
gd
/I
GM
L
GD
TM
T
H
GT
DRM
Maximum on-state voltage
Peak reverse and off-state current
Maximum linear rate of rise of off-state voltage
Rate of rise of on-state current
Threshold voltage
On-state slope resistance
Delay time
Latching current
Holding current
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Parameter
Parameter
Gate source 20V, 20
t
V
At 150A peak, T
At V
To 60% V
At T
At T
V
dI
T
T
V
At V
Anode positive with respect to cathode
Anode negative with respect to cathode
Anode positive with respect to cathode
r
j
j
D
DRM
DRM
G
= 25
= 25
/dt = 1A/ s, T
= 300V, I
0.5 s, T
vj
vj
RRM
DRM
= 12V, T
= 12V, T
= 125
= 125
o
o
/V
C, V
C, V
T
DRM
case
DRM
o
o
j
D
D
C
C
G
, T
= 125
T
= 125˚C
= 12V
= 12V, I
= 1A, I
case
j
case
= 125
case
Conditions
case
j
Conditions
= 25
= 25
= 25
o
= 125
C, R
= 25
o
C, Gate open circuit
T
TM
o
o
o
= 50A, dI/dt = 50A/ s,
C, R
-
C
C, R
L
= 1A
o
o
C
C
= 12
L
L
= 6
= 6
Repetitive 50Hz
Non-repetitive
Min.
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
Max.
0.25
500
800
200
125
4.0
1.5
3.0
0.2
3.0
2.0
1.4
50
10
16
3
-
5
4
TK12
Units
Units
V/ s
A/ s
A/ s
m
mA
mA
mA
mA
W
W
V
V
V
V
V
V
V
A
s
3/8