NTD4970N ON Semiconductor, NTD4970N Datasheet - Page 3

• Manufacturer Part Number: NTD4970N
• Description: Power MOSFET
• Manufacturer: ON Semiconductor

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
NTD4970NT4G
NTD4970N−1G
NTD4970N−35G
ELECTRICAL CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 6)
DRAIN−SOURCE DIODE CHARACTERISTICS
PACKAGE PARASITIC VALUES
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
7. Assume terminal length of 110 mils.
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Source Inductance (Note 7)
Drain Inductance, DPAK
Drain Inductance, IPAK (Note 7)
Gate Inductance (Note 7)
Gate Resistance
Parameter
Device
(T
J
= 25°C unless otherwise specified)
Symbol
t
t
d(OFF)
d(ON)
V
Q
t
R
L
L
L
L
RR
t
t
t
t
SD
a
b
RR
G
r
f
S
D
D
G
http://onsemi.com
IPAK Trimmed Lead
(Pb−Free)
(Pb−Free)
(Pb−Free)
V
Package
GS
V
DPAK
IPAK
V
I
3
GS
S
I
GS
D
= 0 V, dIS/dt = 100 A/ms,
= 30 A
= 15 A, R
= 0 V,
Test Condition
= 10 V, V
T
I
S
A
= 30 A
= 25°C
G
DS
= 3.0 W
= 15 V,
T
T
J
J
= 125°C
= 25°C
Min
2500 / Tape & Reel
75 Units / Rail
75 Units / Rail
0.0164
Shipping
19.5
16.2
0.97
0.88
19.6
10.2
2.85
1.88
Typ
6.3
3.7
9.4
4.9
0.8
7.0
†
Max
1.1
2.2
Unit
nH
ns
ns
nC
W
V