NTD60N03 ON Semiconductor, NTD60N03 Datasheet - Page 3

• Manufacturer Part Number: NTD60N03
• Description: Power MOSFET
• Manufacturer: ON Semiconductor

0.07
0.06
0.05
0.04
0.03
0.02
0.01
40
30
50
20
10
0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
0
0
-50
0.5
Figure 1. On-Region Characteristics
-25
I
V
Figure 5. On-Resistance Variation with
V
D
DS
DS
V
= 30 A
Figure 3. On-Resistance versus
GS
1
, DRAIN-TO-SOURCE VOLTAGE (V)
2
= 10 V
T
, GATE-T O-SOURCE VOLTAGE (V)
J
, JUNCTION TEMPERATURE ( C)
4.5 V
10 V
Gate-T o-Source Voltage
4 V
8 V
6 V
5 V
1.5
0
2
25
Temperature
4
3.8 V
2.5
50
3
6
75
3.5
V
100
T
GS
J
4
I
T
D
= 25 C
8
J
= 2.8 V
= 10 A
= 25 C
3.2 V
3.6 V
3.4 V
3 V
http://onsemi.com
4.5
125
NTD60N03
5
10
150
3
0.015
0.005
1000
0.01
100
60
50
40
30
20
10
10
0
0
1
4
2
5
Figure 4. On-Resistance versus Drain Current
V
T
T
T
GS
J
J
J
V
= 25 C
= 25 C
= 125 C
DS
= 0 V
Figure 6. Drain-To-Source Leakage
V
V
Figure 2. Transfer Characteristics
DS
GS
10
10 V
, DRAIN-TO-SOURCE VOLTAGE (V)
, GATE-T O-SOURCE VOLTAGE (V)
3
8
Current versus Voltage
I
D
T
, DRAIN CURRENT (A)
J
and Gate Voltage
= -55 C
15
T
T
J
J
V
V
= 125 C
= 100 C
GS
12
GS
4
= 4.5 V
= 10 V
20
16
5
25
30
20
6