MGSF3454VT1 Motorola, MGSF3454VT1 Datasheet
MGSF3454VT1
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MGSF3454VT1 Summary of contents
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... Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1997 DRAIN 3 GATE Rating sec Tape Width Quantity 3000 10,000 Order this document by MGSF3454VT1/D MGSF3454VT1 Motorola Preferred Device N–CHANNEL ENHANCEMENT–MODE TMOS MOSFET r DS(on (TYP ...
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... MGSF3454VT1 ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage ( Vdc Zero Gate Voltage Drain Current ( Vdc Vdc Vdc Vdc Gate–Body Leakage Current ( Vdc ...
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... C rss 1. 4.2 A 1.50 1.25 1.00 0.75 7.5 9.0 –50 –25 Figure 6. On–Resistance vs. Junction Temperature MGSF3454VT1 – 125 GATE–TO–SOURCE VOLTAGE (V) C iss C oss – DRAIN–TO–SOURCE VOLTAGE (V) Figure 4. Capacitance 0 25 ...
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... MGSF3454VT1 TYPICAL ELECTRICAL CHARACTERISTICS 150 0.25 0.50 0.75 1. SOURCE–TO–DRAIN VOLTAGE (V) Figure 7. Source–Drain Diode Forward Voltage 0.4 0.2 0 250 A –0.2 –0.4 –0.6 –0.8 –50 – TEMPERATURE ( C) Figure 9. Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 SINGLE PULSE 0.01 1.0E– ...
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... Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. MGSF3454VT1 5 ...
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... B 1.30 1.70 0.0512 0.0669 C 0.90 1.10 0.0354 0.0433 D 0.25 0.50 0.0098 0.0197 G 0.85 1.05 0.0335 0.0413 H 0.013 0.100 0.0005 0.0040 J 0.10 0.26 0.0040 0.0102 K 0.20 0.60 0.0079 0.0236 L 1.25 1.55 0.0493 0.0610 2.50 3.00 0.0985 0.1181 STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN Mfax is a trademark of Motorola, Inc. MGSF3454VT1/D ...