SIM100D12SV1 SemiWell Semiconductor Co., Ltd., SIM100D12SV1 Datasheet

no-image

SIM100D12SV1

Manufacturer Part Number
SIM100D12SV1
Description
??half-bridge?? Igbt
Manufacturer
SemiWell Semiconductor Co., Ltd.
Datasheet
“HALF-BRIDGE” IGBT
Absolute Maximum Ratings
Mounting
Symbol
Features
▪Trench gate + field stopper, using
Infineon chip design
▪ 10µs Short circuit capability
▪ Low turn-off losses
▪ Short tail current for over 18KHz
▪ Positive V
Weight
Torque
temperature coefficient
V
V
T
V
T
I
I
GES
I
CM
T
CES
I
FM
SC
stg
C
F
iso
j
CE
(on)
Collector-to-Emitter Voltage
Gate emitter voltage
Continuous Collector Current
Pulsed collector current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Isolation Voltage test
Junction Temperature
Storage Temperature
Weight of Module
Power Terminal Screw : M5
Terminal connection Screw : M5
Parameter
Applications
▪ AC & DC Motor controls
▪ VVVF inverters
▪ Optimized for high frequency inverter
▪ High frequency SMPS
▪ UPS, Robotics
Type Welding machines
@ Tc = 25℃ (per leg)
Preliminary
- 1 -
V
T
T
T
TC=(25℃)
AC 1 minute
C
C
C
GE
= 80℃(25℃)
= 25℃
= 80℃(25℃)
= 0V,
Condition
I
Package : V1
C
= 500
µA
SIM100D12SV1
V
CE(ON)
V
Ratings
-40 ~ 150
@ Ic = 100A
-40 ~ 125
100(140)
100(140)
CES
Ic = 100A
1200
2500
± 20
200
200
190
3.5
3.5
10
typ. = 1.7V
= 1200V
Unit
Nm
Nm
µs
V
V
A
A
A
A
V
g

Related parts for SIM100D12SV1

SIM100D12SV1 Summary of contents

Page 1

... Terminal connection Screw : M5 Preliminary Type Welding machines @ Tc = 25℃ (per leg) Condition 0V 80℃(25℃ 25℃ 80℃(25℃) C TC=(25℃ minute - 1 - SIM100D12SV1 V = 1200V CES Ic = 100A V typ. = 1.7V CE(ON 100A Package : V1 Ratings µA 1200 = 500 C ± 20 100(140) 200 100(140) 200 10 ...

Page 2

... Min Typ - 1350 1.4 1.7 4.0 5 1.4 1 25℃ (unless otherwise specified) Min Typ - 8653 - 452 - 395 - 342 - 45 - 624 - 108 - 155 - 100 Parameters - 2 - SIM100D12SV1 Max Unit Test conditions 1374 100A GE, - 500 µ 0V 0V, V ± 100 CE 2 100A ...

Page 3

... Fig 1. Maximum DC Collector Current vs. Case Temperature Fig 3. Typ. IGBT Output Characteristics T = 25℃ 80µs J SIM100D12SV1 Preliminary Fig 2. Power Dissipation vs. Case Temperature Fig 4. Typ. IGBT Output Characteristics T = 125℃ 80µ ...

Page 4

... Fig 5. Typ. Diode Forward Characteristics tp = 80µs Fig 7. Typical V vs 25℃ J SIM100D12SV1 Preliminary Fig 6. Typ. Transfer Characteristics V CE Fig 8. Typical 50V 10µs vs 125℃ J ...

Page 5

... 0V 1Mhz GE Fig 11. Typ. Switching Time vs 125℃ 200µ 600V 3.9Ω 15V G GE SIM100D12SV1 Preliminary Fig 10. Typical Gate Charge vs 60A 600µH CE Fig 12. Typ. Switching Time vs 125℃ 200µ 100A ...

Page 6

... Preliminary Fig 13. Normalized Transient Thermal Impedance, Juncion-to-Case (IGBT) Fig 14. Normalized Transient Thermal Impedance, Juncion-to-Case (DIODE) SIM100D12SV1 - 6 - ...

Page 7

... Package Outline (dimensions in mm) Headquarter: #602, B/D, 402 BLD, BLK4, Techno-park, Wonmi-Gu, Bucheon-City, S.KOREA Tel)+82-32-234-4781, Fax)+82-32-234-4789 SIM100D12SV1 Preliminary Sales & Marketing Marketing: clzhang@semiwell.com Sales: sales@semiwell.com WEB-site: WWW. Semiwell.com - 7 - OCT., 2008 ...

Related keywords