IRCZ44 International Rectifier, IRCZ44 Datasheet - Page 2

• Manufacturer Part Number: IRCZ44
• Description: Power MOSFET(Vdss=60V/ Rds(on)=0.028ohm/ Id=50A)
• Manufacturer: International Rectifier

IRCZ44
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
C-14

‚
I
V
R
V
g
I
Q
Q
Q
t
t
t
t
L
L
C
C
C
r
C
DSS
I
I
V
t
Q
t
GSS
d(on)
r
d(off)
f
S
on
D
C
SM
rr
V
fs
(BR)DSS
GS(th)
g
gd
iss
oss
rss
oss
DS(ON)
gs
SD
rr
(BR)DSS
V
Repetitive rating; pulse width limited by
R
max. junction temperature. ( See fig. 11 )
DD
G
= 25 , I
= 25V, starting T
/ T
J
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Current Sensing Ratio
Output Capacitance of Sensing Cells
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
AS
= 52A. (See Figure 12)
J
= 25°C, L = 0.013mH
Parameter
Parameter
J
= 25°C (unless otherwise specified)
ƒ
„
Min. Typ. Max. Units
2460 ––– 2720
T
I
Pulse width
–––
–––
–––
Min. Typ. Max. Units
––– 0.060 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 2500 –––
––– 1200 –––
–––
–––
SD
2.0
–––
–––
–––
18
–––
60
–––
J
Intrinsic turn-on time is negligible (turn-on is dominated by L
175°C
52A, di/dt
–––
–––
–––
–––
–––
–––
–––
–––
120
200
––– 0.028
––– -100
–––
4.5
7.5
9.0
–––
140
–––
–––
19
55
86
1.2
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
4.0
300
95
27
210
25
46
2.5
2.8
50*
300µs; duty cycle
250A/µs, V
V/°C
–––
nC
nH
pF
pF
nC
V
V
ns
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
ƒ = 1.0MHz, See Fig. 5
I
V
Between lead,
6 mm (0.25in.)
from package
and center of
die contact
V
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = 100A/µs „
D
D
D
integral reverse
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
GS
G
D
J
J
= 52A
= 52A
= 52A, V
DD
= 25°C, I
= 25°C, I
= 9.1
= 0.54
= V
= 25V, I
= 48V, V
= 0V, I
= 10V, I
= 60V, V
= 20V
= 48V
= 10V, See Fig. 6 and 13 „
= 0V
= 25V
= 0V, V
= -20V
= 30V
2%.
GS
V
(BR)DSS
, I
D
GS
F
DS
S
D
See Fig. 10 „
D
D
= 250µA
GS
GS
= 52A
= 52A, V
Conditions
Conditions
= 250µA
= 31A
= 10V
= 31A„
= 25V, ƒ = 1.0MHz
= 0V, T
= 0V
,
D
= 1mA
GS
J
= 150°C
= 0V „
G
S
+L
D
D
S
)