RJP30E3DPP-M0 Renesas, RJP30E3DPP-M0 Datasheet - Page 3

• Manufacturer Part Number: RJP30E3DPP-M0
• Description: N-Channel Power MOSFET
• Manufacturer: Renesas

RJP30E3DPP-M0
Main Characteristics
R07DS0353EJ0200 Rev.2.00
Apr 15, 2011
1000
0.01
200
160
120
100
0.1
10
80
40
10
0
8
6
4
2
0
0
1
0.1
Collector to Emitter Saturation Voltage
0
0
Collector to Emitter Voltage V
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Voltage V
Ta = 25
1 shot pulse
Pulse Test
Ta = 25
Typical Output Characteristics (2)
Gate to Emitter Voltage V
Maximum Safe Operation Area
15 V
10 V
2
4
°
°
C
1
C
4
8
I
C
= 120 A
10
9 V
12
8 V
6
80 A
Pulse Test
Ta = 25
100
16
8
40 A
GE
CE
7.5 V
7 V
6.5 V
6 V
5.5 V
CE
°
(V)
C
(V)
1000
(V)
10
20
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100
100
0.1
10
80
60
40
20
80
60
40
20
1
0
0
Collector to Emitter Saturation Voltage
1
0
Collector to Emitter Voltage V
0
Pulse Test
Ta = 25
Typical Output Characteristics (1)
25°C
Typical Transfer Characteristics
V
Pulse Test
V
Pulse Test
Gate to Emitter Voltage V
vs. Collector Current (Typical)
CE
GE
Tc = –25°C
75°C
25°C
= 10 V
15 V
= 15 V
Collector Current I
1
2
75°C
°
11 V
C
9 V
8 V
7 V
6.8 V
2
4
10
Tc = –25°C
6
3
6.4 V
C
(A)
8
4
6.2 V
GE
Preliminary
CE
6 V
5.8 V
5.6 V
5.4 V
5.2 V
5 V
Page 3 of 6
(V)
(V)
100
10
5
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