LM108H883 National Semiconductor Corporation, LM108H883 Datasheet - Page 3

no-image

LM108H883

Manufacturer Part Number
LM108H883
Description
Operational Amplifiers
Manufacturer
National Semiconductor Corporation
Datasheet
Electrical Characteristics
Note 1 The maximum junction temperature of the LM108 is 150 C for the LM208 100 C and for the LM308 85 C For operating at elevated temperatures devices
in the H08 package must be derated based on a thermal resistance of 160 C W junction to ambient or 20 C W junction to case The thermal resistance of the
dual-in-line package is 100 C W junction to ambient
Note 2 The inputs are shunted with back-to-back diodes for overvoltage protection Therefore excessive current will flow if a differential input voltage in excess of
1V is applied between the inputs unless some limiting resistance is used
Note 3 For supply voltages less than
Note 4 These specifications apply for
specifications are limited to
Note 5 Refer to RETS108X for LM108 military specifications and RETs 108AX for LM108A military specifications
Note 6 Human body model 1 5 k
Schematic Diagram
Input Voltage Range
Common Mode
Rejection Ratio
Supply Voltage
Rejection Ratio
Parameter
b
25 C
V
s
in series with 100 pF
Condition
S
T
g
g
A s
e
15V the absolute maximum input voltage is equal to the supply voltage
5V
g
s
85 C and for the LM308 they are limited to 0 C
15V
V
S s g
(Note 4) (Continued)
20V and
g
Min
85
80
13 5
b
55 C
LM108 LM208
s
T
A s
Typ
100
96
3
a
125 C unless otherwise specified With the LM208 however all temperature
Max
s
T
A s
70 C
g
Min
80
80
14
LM308
Typ
100
96
Max
TL H 7758– 8
Units
dB
dB
V

Related parts for LM108H883