BF1107W Philips Semiconductors, BF1107W Datasheet - Page 2

• Manufacturer Part Number: BF1107W
• Description: N-channel single gate MOS-FETs
• Manufacturer: Philips Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
The BF1107 and BF1107W are depletion type field-effect
transistors in SOT23 and SOT323 packages respectively.
The low loss and high isolation capabilities of this
MOS-FET provide excellent RF switching functions.
Integrated diodes between gate and source and between
gate and drain protect against excessive input voltage
surges. Drain and source are interchangeable.
PINNING
QUICK REFERENCE DATA
1999 May 14
R
V
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
SYMBOL
S
S
Currentless RF switch.
Various RF switching applications such as:
- Passive loop through for VCR tuner
- Transceiver switching.
GSoff
DSon
N-channel single gate MOS-FETs
21(on)
21(off)
PIN
1
2
3
2
2
drain
source
gate
losses (on-state)
isolation (off-state)
drain-source on-resistance
pinch-off voltage
BF1107
PARAMETER
DESCRIPTION
drain
source
gate
BF1107W
R
V
I
D
GS
S
= 20 A; V
= R
= 0; I
CAUTION
L
= 50 ; f = 50 to 860 MHz
D
2
CONDITIONS
= 1 mA
DS
handbook, halfpage
Marking code: S3p.
Marking code: W3.
= 1 V
Fig.2 Simplified outline SOT323 (BF1107W).
handbook, halfpage
Fig.1 Simplified outline SOT23 (BF1107).
Top view
Top view
1
1
30
BF1107; BF1107W
MIN.
3
3
MSB003
12
TYP.
3
Product specification
2
2
MAM062
2.5
20
MAX.
4.5
1
dB
dB
V
UNIT
3
2