BF556A Philips Semiconductors, BF556A Datasheet - Page 2

• Manufacturer Part Number: BF556A
• Description: N-channel silicon junction field-effect transistors
• Manufacturer: Philips Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
N-channel symmetrical silicon junction field-effect
transistors in a SOT23 package.
PINNING - SOT23
QUICK REFERENCE DATA
1996 Jul 29
V
V
I
P
SYMBOL
DSS
y
Low leakage level (typ. 500 fA)
High gain
Low cut-off voltage.
Impedance converters in e.g. electret microphones and
infra-red detectors
DS
GSoff
tot
N-channel silicon junction
field-effect transistors
VHF amplifiers in oscillators and mixers.
fs
PIN
1
2
3
drain-source voltage (DC)
gate-source cut-off voltage
drain current
total power dissipation
forward transfer admittance
BF556A
BF556B
BF556C
SYMBOL
s
d
g
PARAMETER
source
drain
gate‘
DESCRIPTION
I
V
up to T
V
2
D
GS
GS
= 200 A; V
handbook, halfpage
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
= 0; V
= 0; V
Marking codes:
BF556A: M84.
BF556B: M85.
BF556C: M86.
amb
Top view
CONDITIONS
DS
DS
= 25 C
Fig.1 Simplified outline and symbol.
= 15 V
= 15 V
2
DS
BF556A; BF556B; BF556C
= 15 V
3
CAUTION
1
3
6
11
4.5
0.5
MIN.
MAM036
Product specification
g
7
13
18
250
MAX.
30
7.5
V
V
mA
mA
mA
mW
mS
UNIT
d
s