BF585 Philips Semiconductors, BF585 Datasheet - Page 3
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BF585
Manufacturer Part Number
BF585
Description
NPN high-voltage transistors
Manufacturer
Philips Semiconductors
Datasheet
1.BF585.pdf
(8 pages)
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Part Number
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Quantity
Price
Philips Semiconductors
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
1999 Apr 21
R
R
I
I
h
V
C
C
f
j
CBO
EBO
T
SYMBOL
SYMBOL
FE
CEsat
th j-a
th j-mb
= 25 C unless otherwise specified.
c
re
NPN high-voltage transistors
thermal resistance from junction to ambient
thermal resistance from junction to mounting base
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
collector capacitance
feedback capacitance
transition frequency
PARAMETER
PARAMETER
I
I
I
I
I
I
I
I
I
E
E
C
C
C
C
E
C
C
= 0; V
= 0; V
= i
= 0; V
= 25 mA; V
= 40 mA; V
= 30 mA; I
= i
= 10 mA; V
e
c
= 0; V
= 0; V
3
CB
CB
EB
CONDITIONS
= 300 V
= 250 V; T
= 5 V
CB
CE
B
CE
CE
CE
= 5 mA
= 30 V; f = 1 MHz
= 30 V; f = 1 MHz
= 20 V
= 20 V
= 10 V
j
= 150 C
50
20
70
MIN.
VALUE
78
25
BF585; BF587
Product specification
20
20
100
600
2.5
1.8
110
MAX.
UNIT
K/W
K/W
nA
nA
mV
pF
pF
MHz
A
UNIT