BF861 Philips Semiconductors, BF861 Datasheet - Page 3

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BF861

Manufacturer Part Number
BF861
Description
N-channel junction FETs
Manufacturer
Philips Semiconductors
Datasheet

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Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board.
1997 Sep 04
V
V
V
I
P
T
T
G
stg
j
DS
GSO
DGO
tot
N-channel junction FETs
SYMBOL
(mW)
P
tot
300
200
100
0
0
Fig.2 Power derating curve.
drain-source voltage (DC)
gate-source voltage
drain-gate voltage (DC)
forward gate current (DC)
total power dissipation
storage temperature
operating junction temperature
50
PARAMETER
100
T amb ( C)
MRC166
o
150
open drain
open source
up to T
3
CONDITIONS
amb
= 25 C; note 1
BF861A; BF861B; BF861C
65
MIN.
25
25
25
10
250
+150
150
Product specification
MAX.
V
V
V
mA
mW
C
C
UNIT

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