ATF-13786 Agilent(Hewlett-Packard), ATF-13786 Datasheet - Page 2

• Manufacturer Part Number: ATF-13786
• Description: Surface Mount Gallium Arsenide FET for Oscillators
• Manufacturer: Agilent(Hewlett-Packard)

ATF-13786 Absolute Maximum Ratings
ATF-13786 Electrical Specifications,
(unless noted)
Notes:
4. Recommended maximum bias conditions for use as an oscillator.
5. The superior phase noise of this product results from the use of a gate structure optimized for noise performance.
Symbol
Typical performance of 10 GHz parallel resonated, lightly coupled oscillator using high Q dielectric resonator.
Symbol
Thermal Resistance
|S
G
P
V
I
T
PN
g
V
T
BDG
DSS
V
V
V
1 dB
I
1 dB
21
P
STG
m
DS
P
DS
GS
GD
CH
|
T
2
Insertion Power Gain
Power at 1 dB Gain Compression
1 dB Compressed Gain
Phase Noise (100 kHz offset)
Transconductance
Saturated Drain Current
Pinchoff Voltage
Gate - Drain Breakdown Voltage
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
Power Dissipation
Channel Temperature
Storage Temperature
Parameter
Parameters and Test Conditions
[2]
:
[2,3]
jc
= 325 C/W
[5]
Units
mW
mA
V
V
V
C
C
T
C
V
= 25 C, V
DS
V
V
5-44
DS
DS
= 3 V, I
Absolute Maximum
= 3 V, V
= 3 V, V
I
DG
f = 10 GHz
f = 10 GHz
f = 10 GHz
f = 10 GHz
-65 to +150
DS
DS
= 0.1 mA
GS
GS
= 3 V, I
= 1 mA
I
225
150
DSS
-4
-6
4
= 0 V
= 0 V
DS
= 40 mA
dBc/Hz
Units
[1]
dBm
mA
mS
dB
dB
V
V
[4]
Notes:
1. Operation of this device above
2. T
3. Derate at 3.1 mW/
any one of these conditions
may cause permanent damage.
to be the temperature at the
ends of pins 2 and 4 where
they contact the circuit
board).
T
Min.
C
CASE
-2.0
6.5
6.5
15
25
50
>60
= 25
o
C.
Typ.
o
16.5
-110
-1.5
C (T
6.0
7.5
55
70
7
CASE
o
C for
Max.
is defined
100
-0.5