NE3514S02 CEL, NE3514S02 Datasheet

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NE3514S02

Manufacturer Part Number
NE3514S02
Description
K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Manufacturer
CEL
Datasheet

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www.DataSheet4U.com
Document No. PG10593EJ01V0DS (1st edition)
Date Published February 2006 CP(N)
FEATURES
• Super low noise figure and high associated gain
• Micro-X plastic (S02) package
APPLICATIONS
• 20 GHz-band DBS LNB
• Other K-band communication systems
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
NE3514S02-T1C
NE3514S02-T1D
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Remark To order evaluation samples, contact your nearby sales office.
Note Mounted on 1.08 cm
Part Number
NF = 0.75 dB TYP., G
Part number for sample order: NE3514S02
Parameter
NE3514S02-T1C-A
NE3514S02-T1D-A
Order Number
K BAND SUPER LOW NOISE AMPLIFIER
a
2
= 10 dB TYP. @ f = 20 GHz
× 1.0 mm (t) glass epoxy PCB
HETERO JUNCTION FIELD EFFECT TRANSISTOR
Symbol
P
tot
S02 (Pb-Free)
V
V
T
T
I
I
DS
GS
D
G
stg
ch
Note
Package
A
N-CHANNEL HJ-FET
= +25°C)
−65 to +125
2 kpcs/reel
10 kpcs/reel
Ratings
Quantity
+125
I
100
165
−3
DSS
4
Marking
D
Unit
mW
mA
µ
°C
°C
V
V
A
• 8 mm wide embossed taping
• Pin 4 (Gate) faces the perforation side
of the tape
NE3514S02
Supplying Form

Related parts for NE3514S02

NE3514S02 Summary of contents

Page 1

... Part Number Order Number NE3514S02-T1C NE3514S02-T1C-A NE3514S02-T1D NE3514S02-T1D-A Remark To order evaluation samples, contact your nearby sales office. www.DataSheet4U.com Part number for sample order: NE3514S02 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation ...

Page 2

... µ 100 mA GHz Data Sheet PG10593EJ01V0DS NE3514S02 MIN. TYP. MAX. Unit µ − 0 −0.2 −0.7 −2.0 V − − 0.75 1.0 dB − ...

Page 3

... A DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 200 250 0 (˚ ( Data Sheet PG10593EJ01V0DS NE3514S02 –0.2 V –0.4 V –0.6 V 1.0 2.0 Drain to Source Voltage V ( ...

Page 4

... S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.ncsd.necel.com/ 4 Data Sheet PG10593EJ01V0DS NE3514S02 ...

Page 5

... RF MEASURING LAYOUT PATTERN (REFERENCE ONLY) (UNIT: mm) Reference Plane (Calibration Plane) φ 0.3 TH RT/duroid 5880/ROGERS t = 0.254 mm εr = 2.20 tan delta = 0.0009 @10 GHz 2.80 2.60 2.06 0.64 1.7 mm/R.P. 2.6 1.7 1.7 Reference Plane (Calibration Plane) L2–uX Ver. 1 6.0 Data Sheet PG10593EJ01V0DS NE3514S02 5 ...

Page 6

... PACKAGE DIMENSIONS S02 (UNIT: mm) (Top View) 0.65 TYP (Side View) 6 (Bottom View) 3.2±0 2.2±0.2 1.7 3.2±0.2 PIN CONNECTIONS 1. Source 2. Drain 3. Source 4. Gate Data Sheet PG10593EJ01V0DS NE3514S02 2.2±0 ...

Page 7

... Caution Do not use different soldering methods together (except for partial heating). Soldering Conditions : 260°C or below : 10 seconds or less : 60 seconds or less : 120±30 seconds : 3 times : 0.2%(Wt.) or below : 350°C or below : 3 seconds or less : 0.2%(Wt.) or below Data Sheet PG10593EJ01V0DS NE3514S02 For soldering Condition Symbol IR260 HS350 7 ...

Page 8

... CAS numbers and other limited information may not be available for release event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. ...

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