BLF1047 Philips Semiconductors, BLF1047 Datasheet - Page 2

• Manufacturer Part Number: BLF1047
• Description: UHF power LDMOS transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT541A) with a ceramic cap. The common source is
connected to the mounting flange.
QUICK REFERENCE DATA
RF performance at T
2000 Feb 02
CW, class-AB (2-tone)
CW, class-AB (1-tone)
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
High power gain
Easy power control
Excellent ruggedness
Source on underside eliminates DC isolators, reducing
common mode inductance
Designed for broadband operation (HF to 1 GHz).
Communication transmitter applications in the UHF
frequency range.
UHF power LDMOS transistor
MODE OF OPERATION
h
= 25 C in a common source test circuit.
f
1
= 960; f
(MHz)
960
f
2
= 960.1
CAUTION
V
(V)
26
26
2
DS
PINNING - SOT541A
handbook, halfpage
PIN
70 (PEP)
1
2
3
(W)
P
70
L
Top view
Fig.1 Simplified outline.
drain
gate
source, connected to flange
(dB)
>14
>14
G
p
1
2
DESCRIPTION
Preliminary specification
MBK765
>35
>45
(%)
3
D
BLF1047
(dBc)
d
im
26