BLF2022-30 Philips Semiconductors, BLF2022-30 Datasheet - Page 2

• Manufacturer Part Number: BLF2022-30
• Description: UHF power LDMOS transistor
• Manufacturer: Philips Semiconductors

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Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
30 W LDMOS power transistor for base station
applications at frequencies from 2000 to 2200 MHz.
QUICK REFERENCE DATA
Typical RF performance at T
2003 Feb 24
2-tone, class-AB
two-carrier W-CDMA test
model 1, 64 channels
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
MODE OF OPERATION
Typical W-CDMA performance at a supply voltage of
28 V and I
– Output power = 3.5 W (AV)
– Gain = 12.9 dB
– Efficiency = 16.5%
– ACPR = 45 dBc at 3.84 MHz
– d
Easy power control
Excellent ruggedness
High power gain
Excellent thermal stability
Designed for broadband operation (2000 to 2200 MHz)
Internally matched for ease of use.
RF power amplifiers for W-CDMA base stations and
multicarrier applications in the 2000 to 2200 MHz
frequency range.
UHF power LDMOS transistor
im
= 42 dBc
DQ
of 240 mA:
h
f
1
f
= 25 C in a common source test circuit.
1
= 2170; f
= 2155; f
(MHz)
f
2
2
= 2170.1
= 2165
CAUTION
V
(V)
28
28
DS
2
PINNING - SOT608A
(mA)
240
270
I
DQ
PIN
1
2
3
30 (PEP)
3.5 (AV)
Fig.1 Simplified outline (SOT608A).
(W)
P
L
Top view
drain
gate
source, connected to flange
(dB)
12.6
12.9
G
p
1
2
DESCRIPTION
34.3
16.5
(%)
MBL290
D
Product specification
3
BLF2022-30
(dBc)
d
29.5
42
im
ACLR
(dBc)
45
5