BLF2047L Philips Semiconductors, BLF2047L Datasheet - Page 4

• Manufacturer Part Number: BLF2047L
• Description: UHF power LDMOS transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
1999 Dec 06
handbook, halfpage
handbook, halfpage
UHF power LDMOS transistor
f
I
Fig.2
V
Fig.4
1
DQ
DS
= 2000 MHz; f
(dB)
G p
( )
= 350 mA; T
Z i
= 26 V; I
15
10
8
6
4
2
0
2
5
1.6
0
Power gain and drain efficiency as a
function of load power; typical values.
Input impedance as a function of frequency
(series components); typical values.
D
= 350 mA; P
h
2
20
= 2000.1 MHz; V
25 C.
1.8
G p
L
40
= 65 W; T
x i
r i
D
2
DS
60
= 26 V;
h
25 C.
P L (PEP) (W)
2.2
80
f (GHz)
MGS950
MGS952
100
2.4
50
40
30
20
10
0
(%)
D
4
handbook, halfpage
handbook, halfpage
f
I
Fig.3
V
Fig.5
(dBc)
1
DQ
d im
DS
= 2000 MHz; f
( )
Z L
= 350 mA; T
= 26 V; I
10
20
30
40
50
60
0
4
2
0
2
4
6
1.6
0
Intermodulation distortion as a function of
load power; typical values.
Load impedance as a function of frequency
(series components); typical values.
D
= 350 mA; P
d 3
d 5
d 7
h
2
20
= 2000.1 MHz; V
25 C.
1.8
L
40
= 65 W; T
R L
X L
2
DS
= 26 V;
60
h
25 C.
P L (PEP) (W)
Product specification
2.2
BLF2047L
80
f (GHz)
MGS951
MGS953
100
2.4