BLF2048 Philips Semiconductors, BLF2048 Datasheet - Page 4
BLF2048
Manufacturer Part Number
BLF2048
Description
UHF push-pull power LDMOS transistor
Manufacturer
Philips Semiconductors
Datasheet
1.BLF2048.pdf
(12 pages)
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Part Number
Manufacturer
Quantity
Price
Philips Semiconductors
2000 Feb 17
handbook, halfpage
handbook, halfpage
Fig.2
UHF push-pull power LDMOS transistor
f
I
f
I
Fig.4
1
DQ
1
DQ
(dBc)
d im
(dB)
= 2000 MHz; f
= 2000 MHz; f
G p
= 2 x 400 mA; T
= 2 x 400 mA; T
20
16
12
10
20
30
40
50
60
8
4
0
Power gain and drain efficiency as functions of
peak envelope load power; typical values.
0
0
d 3
Intermodulation distortion as a function of
peak envelope load power; typical values.
d 5
G p
D
2
2
40
40
= 2000.1 MHz;
= 2000.1 MHz;
h
h
25 C.
25 C.
80
80
120
120
P L (PEP) (W)
P L (PEP) (W)
26 V
V DS = 26 V
V DS = 26 V
160
160
28 V
28 V
28 V
26 V
28 V
MGT007
MGT009
200
200
50
40
30
20
10
0
(%)
D
4
handbook, halfpage
handbook, halfpage
Fig.3
f
I
f
I
Fig.5
1
DQ
1
DQ
(dBc)
(dB)
d im
= 2200 MHz; f
= 2200 MHz; f
G p
= 2 x 400 mA; T
= 2 x 400 mA; T
20
16
12
10
20
30
40
50
60
8
4
0
Power gain and drain efficiency as functions of
peak envelope load power; typical values.
0
0
Intermodulation distortion as a function of
peak envelope load power; typical values.
d 5
d 3
G p
D
2
2
40
40
= 2200.1 MHz;
= 2200.1 MHz;
h
h
25 C.
25 C.
80
80
120
120
Preliminary specification
V DS = 26 V
26 V
28 V
P L (PEP) (W)
P L (PEP) (W)
V DS = 26 V
160
160
BLF2048
28 V
28 V
28 V
26 V
MGT008
MGT010
200
200
50
40
30
20
10
0
(%)
D