BLF277 Philips Semiconductors, BLF277 Datasheet - Page 2

• Manufacturer Part Number: BLF277
• Description: VHF power MOS transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
FEATURES
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for large signal amplifier
applications in the VHF frequency
range.
The transistor is encapsulated in a
6-lead, SOT119 flange envelope, with
a ceramic cap. All leads are isolated
from the flange.
A marking code, showing gate-source
voltage (V
for matched pair applications. Refer
to the ‘General' section for further
information.
PINNING - SOT119
QUICK REFERENCE DATA
RF performance at T
September 1992
CW, class-B
High power gain
Easy power control
Gold metallization ensures
excellent reliability
Good thermal stability
Withstands full load mismatch.
VHF power MOS transistor
PIN
1
2
3
4
5
6
source
source
gate
drain
source
source
GS
MODE OF OPERATION
) information is provided
DESCRIPTION
h
= 25 C in a common source circuit.
andbook, halfpage
PIN CONFIGURATION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
3
5
1
(MHz)
175
f
2
Fig.1 Simplified outline and symbol.
V
(V)
50
DS
WARNING
CAUTION
MSB006
2
4
6
150
(W)
P
L
Product specification
(dB)
g
MBB072
G
14
p
d
s
BLF277
(%)
50
D