3SK166 Sony Corporation, 3SK166 Datasheet
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3SK166
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3SK166 Summary of contents
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... GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office. Description The 3SK166A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. The circuit matching is easier to be made for all UHF band, resulting in the excellent performance, due to the optimal design of input impedance ...
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... Min. Typ. 20 –1 – 1 G1S (V = 5V) DS –2.0 –1.5 –1.0 –0.5 V – Gate 1 to source voltage [V] G1S 3SK166A (Ta = 25°C) Max. Unit 100 µA –20 µA –20 µ –4 V – 2 2 G2S = 1.5V 1 ...
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... G1S Ga vs. V G1S ( 800MHz G2S –1.7 –1.6 –1.5 –1.4 –1.3 –1.2 –1.1 V – Gate 1 to source voltage [V] G1S NF 1.5V 10mA) DS G2S D Ga NFmin 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 f – Frequency [GHz] 3SK166A V G2S = 1.5V 1.0V 0.5V 0V –0.5V –1. 1.5V 1.0V 1.5V –1.0 –0 2.0 2.2 ...
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... ANG –1.9 –4.0 –6.1 –8.2 –10.2 –12.1 –14.2 –16.3 –18.2 –20.3 –22.3 –24.4 –26.5 –28.9 –31.4 –33.9 –36.9 – ...
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... Package Outline Unit 0. 0.1 0.4 – 0.05 ( 0.95 ) SONY CODE EIAJ CODE JEDEC CODE M-254 2.9 ± 0.2 1 0.1 0.6 – 0.05 ( 0.85 ) 1.8 M-254 PACKAGE MASS – 5 – + 0.2 1.1 – 0 0.1 + 0.1 0.10 – 0.01 1. Source 2. Gate1 3. Gate2 4. Drain 0.01g 3SK166A ...