3SK166 Sony Corporation, 3SK166 Datasheet

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3SK166

Manufacturer Part Number
3SK166
Description
GaAs N-channel Dual Gate MES FET
Manufacturer
Sony Corporation
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
3SK166A
Manufacturer:
SONY/索尼
Quantity:
20 000
For the availability of this product, please contact the sales office.
Description
MES FET for UHF band low-noise amplification. The
circuit matching is easier to be made for all UHF
band, resulting in the excellent performance, due to
the optimal design of input impedance.
Features
• Low voltage operation
• Low noise: NF = 1.2dB (typ.) at 800MHz
• High gain: Ga = 20dB (typ) at 800MHz
• High stability
Application
Structure
Absolute Maximum Ratings (Ta = 25°C)
• Drain to source voltage
• Gate 1 to source voltage
• Gate 2 to source voltage
• Drain current
• Allowable power dissipation
• Channel temperature
• Storage temperature
The 3SK166A is an N-channel dual gate GaAs
UHF band amplifier, oscillator
GaAs N-channel dual-gate metal semiconductor field-effect transistor
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
GaAs N-channel Dual Gate MES FET
V
V
V
I
P
Tch
Tstg
D
DSX
G1S
G2S
D
–55 to +150
150
150
–6
–6
80
8
– 1 –
mW
mA
°C
°C
V
V
V
3SK166A
E96Y11-PS

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3SK166 Summary of contents

Page 1

... GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office. Description The 3SK166A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. The circuit matching is easier to be made for all UHF band, resulting in the excellent performance, due to the optimal design of input impedance ...

Page 2

... Min. Typ. 20 –1 – 1 G1S (V = 5V) DS –2.0 –1.5 –1.0 –0.5 V – Gate 1 to source voltage [V] G1S 3SK166A (Ta = 25°C) Max. Unit 100 µA –20 µA –20 µ –4 V – 2 2 G2S = 1.5V 1 ...

Page 3

... G1S Ga vs. V G1S ( 800MHz G2S –1.7 –1.6 –1.5 –1.4 –1.3 –1.2 –1.1 V – Gate 1 to source voltage [V] G1S NF 1.5V 10mA) DS G2S D Ga NFmin 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 f – Frequency [GHz] 3SK166A V G2S = 1.5V 1.0V 0.5V 0V –0.5V –1. 1.5V 1.0V 1.5V –1.0 –0 2.0 2.2 ...

Page 4

... ANG –1.9 –4.0 –6.1 –8.2 –10.2 –12.1 –14.2 –16.3 –18.2 –20.3 –22.3 –24.4 –26.5 –28.9 –31.4 –33.9 –36.9 – ...

Page 5

... Package Outline Unit 0. 0.1 0.4 – 0.05 ( 0.95 ) SONY CODE EIAJ CODE JEDEC CODE M-254 2.9 ± 0.2 1 0.1 0.6 – 0.05 ( 0.85 ) 1.8 M-254 PACKAGE MASS – 5 – + 0.2 1.1 – 0 0.1 + 0.1 0.10 – 0.01 1. Source 2. Gate1 3. Gate2 4. Drain 0.01g 3SK166A ...

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