NE67483B CEL, NE67483B Datasheet - Page 2

• Manufacturer Part Number: NE67483B
• Description: (NE67400 / NE67483B) NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET
• Manufacturer: CEL

RECOMMENDED OPERATING
CONDITIONS
ABSOLUTE MAXIMUM RATINGS
Note:
1. Operation in excess of any one of these conditions may result in
permanent damage.
TYPICAL PERFORMANCE CURVES
SYMBOLS
SYMBOLS
T
V
V
T
V
I
P
P
STG
DS
I
DS
GD
CH
DS
D
IN
T
400
300
200
100
Drain to Source Voltage
0
Drain to Source Voltage
Gate to Drain Voltage
Drain Current
Channel Temperature
Storage Temperature
Total Power Dissipation
NE67483B
NE67400
TOTAL POWER DISSIPATION vs.
PARAMETERS
Drain Current
Input Power
Ambient Temperature, T
AMBIENT TEMPERATURE
PARAMETERS
(T
A
50
= 25°C)
100
UNITS MIN
dBm
mA
V
150
A
UNITS
mW
mW
(°C)
mA
°C
°C
V
V
1 (T
200
-65 to +175
RATINGS
TYP MAX
A
10
3
–6.0
I
175
270
400
5.0
DSS
(T
= 25°C)
A
= 25°C)
30
15
4
TYPICAL NOISE PARAMETERS
V
DS
FREQ.
(GHz)
10
11
12
13
14
15
16
17
18
= 3 V, I
2
3
4
5
6
7
8
9
40
30
20
10
DS
0
NF
= 10 mA (NE67483B)
(dB)
0.55
0.58
0.60
0.68
0.76
0.85
0.93
1.03
1.15
1.26
1.40
1.55
1.70
1.84
2.04
2.18
2.35
OPT
DRAIN TO SOURCE VOLTAGE
Drain to Source Voltage, V
1
DRAIN CURRENT vs.
(dB)
17.0
15.2
14.0
13.2
12.6
12.0
11.5
11.0
10.7
10.3
10.0
9.6
9.2
9.0
8.6
8.3
8.0
G
A
2
MAG
0.81
0.75
0.70
0.67
0.65
0.64
0.64
0.64
0.64
0.64
0.63
0.62
0.60
0.57
0.53
0.46
0.38
3
Γ Γ Γ Γ Γ
OPT
ANG
DS
-173
-159
-145
-129
-113
111
123
136
148
161
173
-95
4
37
53
69
83
97
V
-0.2 V
-0.4 V
-0.6 V
GS
(V)
= 0 V
(T
A
5
Rn/50
= 25°C)
0.57
0.51
0.44
0.37
0.31
0.25
0.19
0.14
0.10
0.06
0.05
0.05
0.08
0.15
0.23
0.34
0.44