PTF10020 Ericsson, PTF10020 Datasheet
PTF10020
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PTF10020 Summary of contents
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PTF 10020 125 Watts, 860–960 MHz GOLDMOS ™ Field Effect Transistor Description The PTF 10020 is an internally matched, 125 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. Nitride surface passivation and gold metallization ...
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PTF 10020 Electrical Characteristics Characteristic Drain-Source Breakdown Voltage V Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance Maximum Ratings Parameter (1) Drain-Source Voltage (1) Gate-Source Voltage Operating Junction Temperature Total Device Dissipation at Above 25°C derate by Storage Temperature Range ...
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Typical Performance Typical P , Gain & Efficiency OUT vs. Frequency 15 Output Power ( Gain (dB 1.4 A Total 860 880 900 920 Frequency (MHz) ...
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PTF 10020 Typical Performance Impedance Data ( 1 125 OUT Z Source G G Frequency Z Source MHz R 835 1.7 860 1.9 885 1.9 910 1.9 935 2.5 ...
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Typical Scattering Parameters ( S11 (MHz) Mag Ang 800 0.974 176 810 0.974 175.9 820 0.974 175.7 830 0.974 175.6 840 0.972 175.4 850 0.972 175.4 860 0.971 175.2 870 ...
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... PTF 10020 Components Layout (not to scale) Artwork (1 inch ) Ericsson Microelectronics 1-877-GOLDMOS (465-3667) United States RF Power Products +46 8 757 4700 International Morgan Hill, CA 95037 USA e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. L3 © 1998 Ericsson Inc. EUS/KR 1301-PTF 10020 Uen Rev. A 01-15-00 6 ...