PTF10100 Ericsson, PTF10100 Datasheet
PTF10100
Related parts for PTF10100
PTF10100 Summary of contents
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Description The 10100 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications from 860 to 900 MHz rated at 165 watts power output. Nitride surface passivation and gold metallization ensure excellent ...
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PTF 10100 Electrical Characteristics Characteristic Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance RF Specifications (100% Tested) Characteristic Gain ( 165 OUT DQ Power Output Compression ...
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Typical Performance Output Power vs. Supply Voltage 200 180 160 140 120 100 Supply Voltage (Volts) *This part is internally matched. Measurements of the finished product will not yield these figures. Intermodulation Distortion ...
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PTF 10100 Impedance Data 1.8 A Total OUT Z Source G G Frequency Z Source MHz R 860 2.3 870 1.9 880 1.8 890 1.7 900 1.6 Typical Scattering Parameters (V ...
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Test Circuit Schematic for f = 894 MHz DUT 10100 C1-2 15 pF, Capacitor ATC 100 B C3 0.6–6.0 pF, Variable Capacitor C4 0.35–3.5 pF, Variable Capacitor C5 1–9 pF, Variable Capacitor C6-7, C10, C13-14, C18 33 pF, Capacitor ATC ...
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... PTF 10100 Components Layout (not to scale) Artwork (1 inch ) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 Specifications subject to change without notice. 1-877-GOLDMOS L2 (1-877-465-3667) © 1998 Ericsson Inc. e-mail: rfpower@ericsson.com EUS/KR 1301-PTF 10100 Uen Rev. A 05-03-99 www.ericsson.com/rfpower 6 ...