PTF10111 Ericsson, PTF10111 Datasheet
PTF10111
Related parts for PTF10111
PTF10111 Summary of contents
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PTF 10111 6 Watts, 1.5 GHz ™ GOLDMOS Field Effect Transistor Description The PTF 10111 watt LDMOS FET intended for large signal amplifier applications to 1.5 GHz. It operates @ 50% efficiency and gain. ...
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PTF 10111 Electrical Characteristics Characteristic Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance RF Specifications (100% Tested) Characteristic Common Source Power Gain ( mA 1.5 ...
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Output Power vs. Supply Voltage 1500 MHz Supply Voltage (Volts) Power Gain vs. Output Power ...
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PTF 10111 Impedance Data ( mA OUT Frequency Z Source GHz R 1.3 9.0 1.4 6.6 1.5 6.8 1.5 6.9 1.5 7.9 1.6 8.3 1.7 8.2 Typical Scattering ...
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Test Circuit Test Circuit Block Diagram for f = 1.5 GHz DUT PTF 10111 C1, C7–9 33 pF, Capacitor ATC 100 B C2, C3 2.2 pF, Capacitor ATC 200 B C10, C11 0 Capacitor C4, C5 1.5 ...
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... PTF 10111 Artwork (1 inch ) Ericsson Microelectronics 1-877-GOLDMOS (465-3667) United States RF Power Products +46 8 757 4700 International Morgan Hill, CA 95037 USA e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. L3 © 1998 Ericsson Inc. EUS/KR 1301-PTF 10111 Uen Rev. A 02-18-99 6 ...