PTF10125 Ericsson, PTF10125 Datasheet

PTF10125

Manufacturer Part Number

PTF10125

Description

135 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor

Manufacturer

Ericsson

Datasheet

1.PTF10125.pdf (6 pages)

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PTF 10125

135 Watts, 1.4–1.6 GHz

GOLDMOS

Description

The PTF 10125 is an internally matched, common source N-channel

enhancement-mode lateral MOSFET intended for linear driver and

final applications from 1.4 to 1.6 GHz, such as DAB/DRB. It is rated

at 135 watts minimum power outpt. Nitride surface passivation and

full gold metallization ensure excellent device lifetime and reliability.

RF Specifications

All published data at T

Characteristic

Gain

Power Output at 1 dB Compression

Drain Efficiency

Load Mismatch Tolerance

f = 1.50, 1.55 GHz)

—all phase angles at frequency of test)

= 28 V, P

= 28 V, I

= 28 V, P

200

180

160

140

120

100

Typical Output Power vs. Input Power

OUT

= 1.3 A Total, f = 1.50, 1.55 GHz)

= 30 W, I

CASE

= 135 W, I

= 67.5 W, I

™

(100% Tested)

Input Power (Watts)

= 25°C unless otherwise indicated.

Field Effect Transistor

= 1.3 A Total,

= 1.3 A Total, f = 1.5 GHz)

= 1.3 A Total, f = 1.5 GHz

f = 1500 MHz

= 1.3 A Total

= 28 V

Symbol

P-1dB

•

INTERNALLY MATCHED

Performance at 1.5 GHz, 28 V

- Output Power = 135 Watts Min

- Power Gain = 12.5 dB Typ

Full Gold Metallization

Silicon Nitride Passivated

Back Side Common Source

Excellent Thermal Stability

100% Lot Traceability

Min

11.5

135

—

Package 20250

Typ

12.5

150

—

Max

10:1

—

Units

Watts

—

Related parts for PTF10125

PTF10125 Summary of contents

Page 1

PTF 10125 135 Watts, 1.4–1.6 GHz GOLDMOS ™ Field Effect Transistor Description The PTF 10125 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DRB. ...

Page 2

PTF 10125 Electrical Characteristics Characteristic Drain-Source Breakdown Voltage V Zero Gate Voltage Drain Current Gate Threshold Voltage Forward Transconductance Maximum Ratings Parameter (1) Drain-Source Voltage (1) Gate-Source Voltage Operating Junction Temperature Total Device Dissipation Above 25°C derate by Storage Temperature ...

Page 3

Power Gain vs. Output Power 1300 1500 MHz I = 650 325 100 Output Power (Watts) Intermodulation Distortion vs. Output ...

Page 4

PTF 10125 Impedance Data ( 135 W, DD OUT I = 1.3 A Total) DQ Frequency Z Source GHz R 1400 2.85 1450 4.16 1500 4.58 1550 4.02 1600 3.41 Z Source Z Load D ...

Page 5

Test Circuit Test Circuit Block Diagram for f = 1.5 GHz Q1 PTF 10125 .25 @ 1.5 GHz 5, 6 .08 @ 1.5 GHz 7, 8 .138 @ 1.5 GHz 9, 10 .096 @ 1.5 GHz ...

Page 6

... PTF 10125 Parts Layout (not to scale) Artwork (1 inch ) Ericsson Microelectronics 1-877-GOLDMOS (465-3667) United States RF Power Products +46 8 757 4700 International Morgan Hill, CA 95037 USA e-mail: rfpower@ericsson.com www.ericsson.com\rfpower Specifications subject to change without notice. L3 © 1998 Ericsson Inc. EUS/KR 1301-PTF 10125 Uen Rev. A 12-01-99 6 ...

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