PTF10125 Ericsson, PTF10125 Datasheet
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PTF10125
Related parts for PTF10125
PTF10125 Summary of contents
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PTF 10125 135 Watts, 1.4–1.6 GHz GOLDMOS ™ Field Effect Transistor Description The PTF 10125 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.4 to 1.6 GHz, such as DAB/DRB. ...
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PTF 10125 Electrical Characteristics Characteristic Drain-Source Breakdown Voltage V Zero Gate Voltage Drain Current Gate Threshold Voltage Forward Transconductance Maximum Ratings Parameter (1) Drain-Source Voltage (1) Gate-Source Voltage Operating Junction Temperature Total Device Dissipation Above 25°C derate by Storage Temperature ...
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Power Gain vs. Output Power 1300 1500 MHz I = 650 325 100 Output Power (Watts) Intermodulation Distortion vs. Output ...
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PTF 10125 Impedance Data ( 135 W, DD OUT I = 1.3 A Total) DQ Frequency Z Source GHz R 1400 2.85 1450 4.16 1500 4.58 1550 4.02 1600 3.41 Z Source Z Load D ...
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Test Circuit Test Circuit Block Diagram for f = 1.5 GHz Q1 PTF 10125 .25 @ 1.5 GHz 5, 6 .08 @ 1.5 GHz 7, 8 .138 @ 1.5 GHz 9, 10 .096 @ 1.5 GHz ...
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... PTF 10125 Parts Layout (not to scale) Artwork (1 inch ) Ericsson Microelectronics 1-877-GOLDMOS (465-3667) United States RF Power Products +46 8 757 4700 International Morgan Hill, CA 95037 USA e-mail: rfpower@ericsson.com www.ericsson.com\rfpower Specifications subject to change without notice. L3 © 1998 Ericsson Inc. EUS/KR 1301-PTF 10125 Uen Rev. A 12-01-99 6 ...