SLD2083CZ sirenza, SLD2083CZ Datasheet

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SLD2083CZ

Manufacturer Part Number
SLD2083CZ
Description
10 Watt high performance LDMOS transistor designed
Manufacturer
sirenza
Datasheet
www.DataSheet4U.com
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without
notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product
for use in life-support devices and/or systems.
Copyright 2005 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Court, Broomfield, CO 80021
Product Description
The SLD2083CZ is a 10 Watt high performance
LDMOS transistor designed for operation to
2700MHz. It is an excellent solution for applica-
tions requiring high linearity and efficiency at a
low cost. The SLD2083CZ is typically used in
the design of driver stages for power amplifiers,
repeaters, and RFID applications. The power
transistor is fabricated using Sirenza’s high per-
formance XeMOS II
RF Specifications
Parameter
Frequency
Functional Schematic Diagram
Efficiency
Linearity
Gain
IRL
Case Flange = Ground
ESD
Protection
TM
process.
Description: Test Conditions in Sirenza Evaluation
Board V
Frequency of Operation
10 Watt CW, 902MHz-928MHz
Drain Efficiency at 10 Watt CW, 915MHz
Input Return Loss, 10 Watt Output Power, 915MHz
3
1dB Compression (P
ACPR=-55dB, IS-95
ACPR=-45dB, IS-95
rd
Order IMD at 10 Watt PEP (Two Tone), 915MHz
DS
= 28.0V, I
1dB
DQ
Phone: (800) SMI-MMIC
), 915MHz
= 125mA, T
1
Flange
Product Features
SLD2083CZ
10 Watt Discrete LDMOS Device
Ceramic Package
Applications
10 Watt Output P
Single Polarity Supply Voltage
High Gain: 18 dB Typical
High Efficiency
Advanced, XeMOS II LDMOS
Integrated ESD Protection, Class 1A
Base Station PA driver
Repeater
RFID
= 25ºC
MHz
Watt
Unit
Watt
Watt
dBc
dB
dB
%
1dB
Min
1.8
3.2
17
40
10
-
-
-
http://www.sirenza.com
Pb
EDS-103754 Rev D
Typ
-15
-28
1.6
3.6
18
47
11
Preliminary
-
&
RoHS Compliant
Green
2700
Max
Package
-10
-26
-
-
-
-
-

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SLD2083CZ Summary of contents

Page 1

... Product Description The SLD2083CZ Watt high performance LDMOS transistor designed for operation to 2700MHz excellent solution for applica- tions requiring high linearity and efficiency at a low cost. The SLD2083CZ is typically used in the design of driver stages for power amplifiers, repeaters, and RFID applications. The power transistor is fabricated using Sirenza’ ...

Page 2

... RF performance. See mounting instructions for recommendation. Pin Diagram Value Unit +33 dBm 10:1 VSWR +200 ºC +270 ºC -20 to +90 ºC -40 to +100 ºC Phone: (800) SMI-MMIC 2 Preliminary SLD2083CZ 10 Watt LDMOS FET Unit Min Typical 590 Volt 3.8 Volt 65 =28V pF 27.5 DS =28V pF 0.81 DS =28V pF 14.65 DS Ω ...

Page 3

... Frequency (MHz) Two Tone IM3 vs. Output Power o Freq=915/916MHz, Temp= =28V -20.0 902MHz -25.0 915MHz -30.0 928MHz -35.0 -40.0 -45.0 -50.0 -55.0 0.0 2.0 4.0 Average Output Power (W) Phone: (800) SMI-MMIC 3 Preliminary SLD2083CZ 10 Watt LDMOS FET =125mA 925 930 =125mA 6.0 http://www.sirenza.com EDS-103754 Rev D ...

Page 4

... SLD2083CZ EVB Layout and BoM Evaluation Board Bill of Materials Description Res, 10, 1/10W, 1%, 0805 Polarized Inductor Coilcraft 1.6nH 0603 Res, 0.0, 1/16W, 5%, 0603 www.DataSheet4U.com Cap, 1000 pF, 100V, 10%, 0603 Cap, 0.01 uF, 100V, 5%, 0805 Cap, 0.5 pF, 250V, +/-.1pF, 0603 Cap, 3.6 pF, 250V, +/-.1pF, 0603 Cap, 12 pF, 250V, 1%, 0603 ...

Page 5

... SIDE VIEW DETAIL A Part Number Ordering Information Part Number SLD2083CZ All Dimensions are in inches Phone: (800) SMI-MMIC 5 Preliminary SLD2083CZ 10 Watt LDMOS FET 0.000±0.002 R0.015 DETAIL A 0.160 0.140 0.008 0.160 END VIEW Devices Per Reel Reel Size 500 7’ ...

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