SLD301B Sony Corporation, SLD301B Datasheet

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SLD301B

Manufacturer Part Number
SLD301B
Description
Block-type 100mW High Power Laser Diode
Manufacturer
Sony Corporation
Datasheet
Description
Features
• Compact size
• High power output Po = 100mW
• Hole for thermistor
Applications
• Solid state laser excitation
• Medical use
Structure
Absolute Maximum Ratings (Tc = 25°C)
• Optical power output
• Recommended optical power output
• Reverse voltage
• Operating temperature
• Storage temperature
Pin Configuration
No.
The SLD301B is a high power laser diode mounted on a 3 3
It is ideal for applications which require a minimal distance between the laser facet and external optical parts.
GaAlAs double hetero-type laser diode
1
2
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
Block-type 100mW High Power Laser Diode
LD cathode
LD anode
Function
3
3
5mm block
1 LD cathode
2 LD anode
Po
Po
V
Topr
Tstg
R
LD
–10 to +50
–40 to +85
– 1 –
100
90
2
mW
mW
5mm Copper block.
°C
°C
V
SLD301B
E89103A81-PS

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SLD301B Summary of contents

Page 1

... Block-type 100mW High Power Laser Diode Description The SLD301B is a high power laser diode mounted ideal for applications which require a minimal distance between the laser facet and external optical parts. Features • Compact size 3 3 5mm block • High power output Po = 100mW • ...

Page 2

... Conditions Min. Ith Iop P = 90mW O Vop P = 90mW 90mW 770 90mW O // ∆X ∆Y, ∆ 90mW O ∆ 90mW 0 – 2 – SLD301B (Tc = 25°C) Typ. Max. Unit 150 200 mA 300 400 mA 1.9 3.0 V 840 degree 12 17 ±300 µm ±100 ±3 degree 0.7 mW/mA ...

Page 3

... 30mW Differential efficiency vs. Temperature characteristics 1 90mW O 1.0 0 –10 – 3 – – Case temperature [° 25° 90mW 75mW 50mW 25mW O 50µ – Case temperature [°C] SLD301B 50 ...

Page 4

... Po – Optical power output [mW] Pulse width dependence of COD power 10 5.0 1.0 0.5 0.1 0.1 0.5 1.0 5.0 10 Pulse width [ s] COD (Catastrophic Optical Damage) Optical power output vs. Operating current 3 2.5 2.0 1.5 1.0 0 0.5 100 120 Iop – Operating current [A] Duty = 10 100 – 4 – SLD301B Pulse width = 1 s Duty = 10 PULSE CW 1.0 1.5 2.0 2.5 ...

Page 5

... Power Dependence of Wavelength 800 805 Wavelength [nm] 800 805 Wavelength [nm] 800 805 Wavelength [nm 20mW 810 800 60mW 810 800 100mW 810 – 5 – SLD301B 40mW 805 810 Wavelength [nm 80mW 805 810 Wavelength [nm] ...

Page 6

... Temperature Dependence of Wavelength (P 805 815 Wavelength [nm] 805 815 Wavelength [nm] 805 815 Wavelength [nm] = 90mW –6 C 825 805 825 805 825 – 6 – SLD301B 815 825 Wavelength [nm 815 825 Wavelength [nm] ...

Page 7

... Package Outline Unit: mm 1.0 1.5 SONY CODE EIAJ CODE JEDEC CODE M – 261 5.0 ± 0.1 Ø1.5 for Thermistor LD Chip Ceramic Contact Plate (LD Cathode) PACKAGE STRUCTURE M-261 PACKAGE WEIGHT – 7 – Body (LD Anode) 1g SLD301B ...

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