SLD302V-2 Sony Corporation, SLD302V-2 Datasheet - Page 3

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SLD302V-2

Manufacturer Part Number
SLD302V-2
Description
200mW High Power Laser Diode
Manufacturer
Sony Corporation
Datasheet
Example of Representative Characteristics
1000
500
100
–10
Threshold current vs. Temperature characteristics
200
100
0
0
0
Power depecdence of near field pattern
Optical power output vs.
Forward current characteristics
Tc – Case temperature [ C]
10
I
T
F
C
– Forward current [mA]
T
= 0 C
C
50 m
= –10 C
20
250
30
T
C
= 50 C
T
C
P
P
P
P
P
P
= 25 C
O
O
O
O
O
O
T
40
= 100mW
= 150mW
= 75mW
= 50mW
= 25mW
= 180mW
C
= 25 C
– 3 –
500
50
Optical power output vs. Monitor current characteristics
200
100
830
820
810
800
790
780
Oscillation wavelength vs. Temperature characteristics
0
–10
0
–30
Power dependence of far field pattern
0
–20
Imon – Monitor current [mA]
Tc – Case temperature [ C]
(parallel to junction)
10
–10
Angle [degree]
0.1
T
C
= –10 C
20
0
10
T
30
C
P
P
P
= 0 C
O
O
O
= 180mW
= 90mW
= 30mW
T
20
P
T
C
T
O
C
C
= 50 C
40
0.2
= 180mW
= 25 C
= 25 C
30
SLD302V
50

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