2SA1111 Inchange Semiconductor, 2SA1111 Datasheet - Page 2

• Manufacturer Part Number: 2SA1111
• Description: POWER TRANSISTOR
• Manufacturer: Inchange Semiconductor

Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
V
65-110
V
V
(BR)CEO
(BR)EBO
h
h
I
I
C
CEsat
BEsat
CBO
EBO
h
FE-1
FE-2
f
P
OB
T
FE-1
Classifications
Collector-emitter
breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
90-155
Q
PARAMETER
130-220
R
2SA1111
2SA1112
185-330
S
I
I
I
I
V
V
I
I
I
I
C
E
C
C
C
C
E
C
CB
EB
=-0.1mA ,I
=-10μA ,I
=-0.5A; I
=-0.5A; I
=-150mA ; V
=-500mA ; V
=0 ; V
=50mA ; V
=-120V; I
=-4V; I
2
CB
CONDITIONS
=-10V;f=1MHz
C
B
B
=-50mA
=-50mA
=0
C
B
CE
E
=0
=0
B
=0
CE
CE
=-10V
=-10V
=-5V
2SA1111 2SA1112
-150
-180
MIN
65
50
-5
Product Specification
TYP.
-0.5
-1.0
200
30
MAX
-2.0
-2.0
330
-1
-1
UNIT
MHz
μA
μA
pF
V
V
V
V