2SA1117 Huandong, 2SA1117 Datasheet
2SA1117
Manufacturer Part Number
2SA1117
Description
Silicon PNP Power Transistors
Manufacturer
Huandong
Datasheet
1.2SA1117.pdf
(3 pages)
www.DataSheet4U.com
Silicon PNP Power Transistors
DESCRIPTION
・With TO-3 package
・High power dissipations
APPLICATIONS
・For power switching amplifier and
PINNING(see Fig.2)
Absolute maximum ratings(Ta=
Huandong Electronics
SYMBOL
general purpose applications
PIN
V
V
V
T
P
1
2
3
CBO
CEO
EBO
I
T
I
C
stg
B
C
j
Base
Emitter
Collector
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
DESCRIPTION
PARAMETER
℃)
Open emitter
Open base
Open collector
T
C
=25℃
CONDITIONS
Fig.1 simplified outline (TO-3) and symbol
Product Specification
-65~150
VALUE
-200
-200
200
150
-17
-6
-5
2SA1117
UNIT
W
℃
℃
V
V
V
A
A
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2SA1117 Summary of contents
Page 1
... B P Collector power dissipation C T Junction temperature j T Storage temperature stg ℃) PARAMETER Open emitter Open base Open collector T =25℃ C Product Specification 2SA1117 Fig.1 simplified outline (TO-3) and symbol CONDITIONS VALUE -200 -200 -6 -17 -5 200 150 -65~150 UNIT ℃ ...
Page 2
... EBO h DC current gain FE f Transition frequency T Product Specification CONDITIONS MIN I =-50mA ;I =0 -200 =-1mA ; =-5A; I =-0. =-200V =- =-0. =-12V 2SA1117 TYP. MAX UNIT V V -2.0 V -0 MHz ...
Page 3
... Huandong Electronics Silicon PNP Power Transistors PACKAGE OUTLINE www.DataSheet4U.com Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 Product Specification 2SA1117 ...