2SA1133 Inchange Semiconductor, 2SA1133 Datasheet

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2SA1133

Manufacturer Part Number
2SA1133
Description
POWER TRANSISTOR
Manufacturer
Inchange Semiconductor
Datasheet
Inchange Semiconductor
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220 package
·High breakdown voltage
·High power dissipation
·Complement to type 2SC2660/2660A
APPLICATIONS
·For power amplifier and TV vertical
PINNING
Absolute maximum ratings(Ta=25
SYMBOL
deflection output applications
V
V
PIN
V
T
I
P
1
2
3
CBO
CEO
EBO
I
CM
T
C
stg
T
j
Emitter
Collector;connected to
mounting base
Base
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Total power dissipation
Junction temperature
Storage temperature
DESCRIPTION
PARAMETER
℃)
2SA1133
2SA1133A
Open emitter
Open base
Open collector
T
C
=25℃
Fig.1 simplified outline (TO-220) and symbol
CONDITIONS
2SA1133 2SA1133A
Product Specification
-55~150
VALUE
-200
-150
-180
-2.0
-3.0
150
30
-6
UNIT
W
V
V
V
A
A

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2SA1133 Summary of contents

Page 1

... T T Junction temperature j T Storage temperature stg Fig.1 simplified outline (TO-220) and symbol ℃) CONDITIONS Open emitter 2SA1133 Open base 2SA1133A Open collector T =25℃ C Product Specification 2SA1133 2SA1133A VALUE UNIT -200 V -150 V -180 -6 V -2 ℃ 150 ℃ -55~150 ...

Page 2

... =-500mA; I =-50mA =-400mA ; V =-10V =-200V =-4V =-150m =-10V =-400mA ; V =-10V Product Specification 2SA1133 2SA1133A MIN TYP. MAX UNIT -150 -180 -200 -6 -1.0 -1.0 -50 -50 60 240 μA μA ...

Page 3

... Inchange Semiconductor Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) Product Specification 2SA1133 2SA1133A 3 ...

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