2SA1627A UTC, 2SA1627A Datasheet
2SA1627A
Available stocks
Related parts for 2SA1627A
2SA1627A Summary of contents
Page 1
... UTC 2SA1627A PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications. FEATURES *High voltage *Low collector saturation voltage. *High-speed switching ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Base Voltage Collector-Emitter Voltage ...
Page 2
... UTC 2SA1627A PNP EPITAXIAL SILICON TRANSISTOR PARAMETER Output Capacitance Turn-On Time Storage Time Fall Time Pulsed PW≦350µs,Duty Cycle≦2% CLASSIFICATION OF hFE1 RANK M RANGE 30-60 TYPICAL CHARACTERISTICS Collector Current vs. Collector to Emitter Voltage -100 I =1.8mA B -80 I =1.6mA B I =1.4mA B -60 I =1.2mA B I =1.0mA ...
Page 3
... UTC 2SA1627A PNP EPITAXIAL SILICON TRANSISTOR Turn Off Time vs.Collecotr Current tstg 2.0 1.0 0.5 0.2 tf 0.1 -0.1 -0.03 -0.3 -1.0 Ic -Collector Current (A) Output Capacitance vs.Collecotor To Base Voltage 200 100 5.0 2.0 -10 -100 -3.0 -30 VCB-Collector to Base Voltage (V) UTC assumes no responsibility for equipment failures that result from using products at values that ...