2SA562 Jiangsu Changjiang Electronics Technology, 2SA562 Datasheet

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2SA562

Manufacturer Part Number

2SA562

Description

PNP Transistor

Manufacturer

Jiangsu Changjiang Electronics Technology

Datasheet

1.2SA562.pdf (1 pages)

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DataSheet

FEATURE

ELECTRICAL CHARACTERISTICS (Tamb=25℃

CLASSIFICATION OF h

4

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

Range

Power dissipation

Collector current

Collector-base voltage

Operating and storage junction temperature range

Rank

U

.com

2SA562

Parameter

P

I

V

T

T

CM

stg

J

CM

(BR) CBO

:

:

h

FE(1)

:

: 0.5

-0.5

150℃

-55℃ to +150℃

: -35

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (PNP)

FE

W (Tamb=25℃)

A

V

V(BR)

V(BR)

V(BR)

Symbol

V

V

I

I

CE(sat)

h

BE(on)

CBO

EBO

f

FE

T

CBO

CEO

EBO

DataSheet4U.com

70-140

O

I

V

C

V

V

= -100mA, I

CE

Test

CE

CE

V

Ic= -100µA , I

V

I

I

unless otherwise specified)

C

E

=-1 V, I

EB

=- 1V, I

CB

= -6 V, I

= -1mA , I

= -100µA, I

= -5V ,

=-35V , I

F=30MHz

conditions

C

C

=-100 mA

C

B

=-100mA

= -20mA

= -10 mA

B

C

I

E

E

C

=0

=0

=0

=0

=0

TO-92

1. EMITTER

2. COLLECTOR

3. BASE

MIN

200

-35

-30

70

-5

TYP

120-240

Y

1 2 3

MAX

-0.25

-0.1

-0.1

240

-1

UNIT

MHz

µA

µA

V

V

V

V

V

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