2SA614 Continental Device India, 2SA614 Datasheet
2SA614
Manufacturer Part Number
2SA614
Description
TO-220 Power Package Transistors
Manufacturer
Continental Device India
Datasheet
1.2SA614.pdf
(2 pages)
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www.DataSheet.in
INCHANGE Semiconductor
isc
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
·Collector-Emitter Saturation Voltage-
·Collector Power Dissipation-
APPLICATIONS
·Designed for medium power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25
isc Website：www.iscsemi.cn
SYMBOL
: V
: V
: P
V
V
V
T
P
T
CBO
CEO
EBO
I
stg
C
C
J
(BR)CEO
CE(sat)
C
Silicon PNP Power Transistor
= 25W@ T
= -0.5V (Max.)@ I
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
= -55V (Min.)
C
= 25℃
PARAMETER
C
= -1A
℃)
-55~150
VALUE
150
-80
-55
25
-5
-3
UNIT
℃
℃
W
V
V
V
A
isc
Product Specification
2SA614
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2SA614 Summary of contents
Page 1
... CBO V Collector-Emitter Voltage CEO V Emitter-Base Voltage EBO I Collector Current-Continuous C P Collector Power Dissipation C T Junction Temperature J Storage Temperature Range T stg isc Website：www.iscsemi.cn www.DataSheet.in = -1A C ℃) VALUE UNIT - ℃ 150 ℃ -55~150 isc Product Specification 2SA614 ...
Page 2
... PARAMETER CONDITIONS I = -10mA -500μ -500μ -1A -0. -80V - -0.5A 120-240 2 isc Product Specification MIN TYP - - - 2SA614 MAX UNIT -0.5 V μA -50 μA -50 240 ...