BFG10 Philips Semiconductors, BFG10 Datasheet

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BFG10

Manufacturer Part Number
BFG10
Description
NPN 2 GHz RF power transistor
Manufacturer
Philips Semiconductors
Datasheet

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Product specification
Supersedes data of 1995 Mar 07
File under Discrete Semiconductors, SC14
DATA SHEET
BFG10; BFG10/X
NPN 2 GHz RF power transistor
DISCRETE SEMICONDUCTORS
1995 Aug 31

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BFG10 Summary of contents

Page 1

... DISCRETE SEMICONDUCTORS DATA SHEET BFG10; BFG10/X NPN 2 GHz RF power transistor Product specification Supersedes data of 1995 Mar 07 File under Discrete Semiconductors, SC14 1995 Aug 31 ...

Page 2

... C(AV) P total power dissipation tot T storage temperature stg T junction temperature j Note the temperature at the soldering point of the collector pin. s 1995 Aug 31 PINNING PIN DESCRIPTION BFG10 (see Fig.1) 1 collector 2 base 3 emitter 4 emitter BFG10/X (see Fig.1) 1 collector 2 emitter 3 base 4 emitter MARKING ...

Page 3

... MHz C CE MLC818 2.0 handbook, halfpage C c (pF) 1.5 1.0 0.5 0 150 200 MHz. C Fig.3 3 Product specification BFG10; BFG10/X VALUE 290 MIN 0.1 mA 2.5 100 = Collector capacitance as a function of collector-base voltage; typical values. UNIT K/W MAX. ...

Page 4

... MODE OF OPERATION Pulsed, class-AB, duty cycle: < Ruggedness in class-AB operation The BFG10 is capable of withstanding a load mismatch corresponding to VSWR = through all phases, at rated output power under pulsed conditions supply voltage 1.9 GHz and a duty cycle handbook, halfpage ...

Page 5

... Philips Semiconductors NPN 2 GHz RF power transistor SPICE parameters for the BFG10 crystal SEQUENCE No. PARAMETER VAF 5 IKF 6 ISE VAR 11 IKR 12 ISC IRB 16 RBM (1) 19 XTB ( (1) 21 XTI 22 CJE 23 VJE 24 MJE 25 TF ...

Page 6

... R2 V bias handbook, full pagewidth 50 input C1 Fig.7 Common-emitter test circuit for class-AB operation at 1.9 GHz. 1995 Aug C14, C15, C16 L10 L9 C11 C10 L8 DUT L2 L1 C2, C3, C4 Product specification BFG10; BFG10 C12 C13 output C6, C7, MLC822 C8 ...

Page 7

... The striplines are on a inch double copper-clad printed-circuit board with PTFE fibre-glass dielectric ( 32 1995 Aug 31 DESCRIPTION 24 pF 0.86 pF 1.1 pF 470 530 7 Product specification BFG10; BFG10/X VALUE DIMENSIONS CATALOGUE No. length 28.5 mm width 0.93 mm length 2.3 mm width 0.93 mm length 3.1 mm width 0.93 mm length 3.3 mm width 0.93 mm length 16.3 mm width 0.93 mm length 10 mm width 0 ...

Page 8

... Fig.8 Printed-circuit board and component lay-out for common-emitter test circuit in Fig.7. 1995 Aug 31 Base 70 R1 L10 C14 L9 C11 L8 L7 C10 Base 8 Product specification BFG10; BFG10/X Collector C12 C13 C15 V S C16 C9 L5 MLC823 Collector ...

Page 9

... Philips Semiconductors NPN 2 GHz RF power transistor PACKAGE OUTLINE handbook, full pagewidth 0.75 0. max 1.1 max Dimensions in mm. 1995 Aug 31 3.0 2.8 0.150 1.9 0.090 4 3 0.1 max o 10 max 0.88 0.48 max 0.1 1.7 TOP VIEW Fig.9 SOT143. 9 Product specification BFG10; BFG10 0.2 A 2.5 1.4 max 1.2 0 MBC845 0 0.1 ...

Page 10

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1995 Aug 31 BFG10; BFG10/X 10 Product specification ...

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