BFG197 Philips Semiconductors, BFG197 Datasheet

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BFG197

Manufacturer Part Number
BFG197
Description
NPN 7 GHz wideband transistor
Manufacturer
Philips Semiconductors
Datasheet
Product specification
Supersedes data of November 1992
File under discrete semiconductors, SC14
DATA SHEET
BFG197; BFG197/X; BFG197/XR
NPN 7 GHz wideband transistor
DISCRETE SEMICONDUCTORS
1995 Sep 13

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BFG197 Summary of contents

Page 1

... DISCRETE SEMICONDUCTORS DATA SHEET BFG197; BFG197/X; BFG197/XR NPN 7 GHz wideband transistor Product specification Supersedes data of November 1992 File under discrete semiconductors, SC14 1995 Sep 13 ...

Page 2

... FEATURES High power gain Low noise figure Gold metallization ensures excellent reliability. DESCRIPTION The BFG197 is a silicon NPN transistor in a 4-pin, dual-emitter plastic SOT143 envelope primarily intended for wideband applications in the GHz range, such as satellite TV systems and repeater amplifiers in fibre-optic systems. ...

Page 3

... GHz amb = ; mA opt GHz amb V dBmV zero and Product specification BFG197; BFG197/X; BFG197/XR MIN. MAX. UNIT 2.5 V 100 mA 350 mW 65 +150 C 175 C VALUE UNIT 290 K/W MIN. TYP. ...

Page 4

... Feedback capacitance as a function of collector-base voltage. 1995 Sep 13 MBC983 - 2 handbook, halfpage h FE 150 200 MCD155 handbook, halfpage (GHz ( BFG197; BFG197/X; 160 120 Fig.4 DC current gain as a function of collector current ...

Page 5

... I (mA MCD159 handbook, halfpage gain (dB) G max (MHz Product specification BFG197; BFG197/X; BFG197/ MSG 30 G max mA. C Fig.8 Gain as a function of frequency MSG ...

Page 6

... V. CE Fig.12 Minimum noise figure as a function of MBB266 handbook, halfpage d 2 (dB) 100 120 I (mA amb CE Fig.14 Second order intermodulation distortion, 6 Product specification BFG197; BFG197/X; BFG197/ (MHz) frequency ...

Page 7

... OPT * F = 1.7 dB min 0.2 0.5 1 0.2 0.5 1 Fig.15 Noise circle figure OPT * F = 2.4 dB min 0.2 0 0.5 1 Fig.16 Noise circle figure. 7 Product specification BFG197; BFG197/X; BFG197/ MCD163 MCD164 ...

Page 8

... CE C Fig.18 Common emitter input reflection coefficient (S 1995 Sep 0.2 0.2 0.5 1 OPT * 0.5 1 Fig.17 Noise circle figure. 1 0.5 3 GHz 0.2 0.2 0.5 1 0.2 40 MHz 0 Product specification BFG197; BFG197/X; BFG197/ MCD165 MCD166 ). 11 ...

Page 9

... Fig.20 Common emitter reverse transmission coefficient (S 1995 Sep 135 o 40 MHz GHz _ o 135 135 o 0.16 0.12 0.08 0.04 40 MHz _ o 135 Product specification BFG197; BFG197/X; BFG197/ MCD167 ). GHz MCD169 ). 12 ...

Page 10

... Philips Semiconductors NPN 7 GHz wideband transistor handbook, full pagewidth 0 – Fig.21 Common emitter output reflection coefficient (S 1995 Sep 13 1 0.5 0.2 0 GHz 40 MHz 0 Product specification BFG197; BFG197/X; BFG197/ MCD168 ). 22 ...

Page 11

... C 30.02 ce 1.649 V L1 401 0.000 deg L3 1.190 160 89.44 m 130.0 m 2.148 ns 0.000 F 750.0 mV 0.000 785 Product specification BFG197; BFG197/X; BFG197/ 50. E (f/Fc). B,E SOT143R. VALUE 191 fF 0.12 nH 0.21 nH 0.06 nH 0. ...

Page 12

... TOP VIEW Fig.23 SOT143. 3.0 2.8 0.150 1.9 0.090 3 0.1 max o 10 max 2 0.48 o 0.38 30 max 1.7 0 TOP VIEW Fig.24 SOT143R. 12 BFG197; BFG197/X; 3.0 B 2.8 1 2.5 1.4 max 1 MBC845 0 0.48 0 2.5 1.4 max 1.2 1 0.88 0.78 MBC844 Product specification BFG197/ ...

Page 13

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1995 Sep 13 BFG197; BFG197/X; 13 Product specification BFG197/XR ...

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