BFG21W Philips Semiconductors, BFG21W Datasheet - Page 2

• Manufacturer Part Number: BFG21W
• Description: UHF power transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
NPN double polysilicon bipolar power transistor with
buried layer for low voltage medium power applications
encapsulated in a plastic, 4-pin dual-emitter SOT343R
package.
QUICK REFERENCE DATA
RF performance at T
1998 Jul 06
Pulsed class-AB;
High power gain
High efficiency
1.9 GHz operating area
Linear and non-linear operation.
Common emitter class-AB output stage in hand held
radio equipment at 1.9 GHz such as DECT, PHS, etc.
Driver for DCS1800, 1900.
UHF power transistor
MODE OF OPERATION
< 1 : 2; t
s
60 C in a common emitter test circuit.
p
= 5 ms
(GHz)
1.9
f
2
PINNING
handbook, halfpage
Marking code: P1.
V
3.6
(V)
CE
Fig.1 Simplified outline SOT343R.
PIN
1, 3
2
4
(dBm)
P
26
3
2
Top view
L
emitter
base
collector
MSB842
4
1
(dB)
G
Product specification
10
DESCRIPTION
p
BFG21W
typ.55
(%)
C