BFG31 Philips Semiconductors, BFG31 Datasheet
BFG31
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BFG31 Summary of contents
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... DISCRETE SEMICONDUCTORS DATA SHEET BFG31 PNP 5 GHz wideband transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 1995 Sep 12 ...
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... C amb I = 100 mA amb CONDITIONS open emitter open base open collector 135 C; note Product specification BFG31 4 page Top view MSB002 - 1 Fig.1 SOT223. MIN. TYP. MAX. UNIT 15 V 100 5.0 GHz ...
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... MHz; 1 MHz MHz; 1 amb = amb = amb 600 550 log ------------------------------------------------------------ dB – amb BFG31 40 K/W MAX. UNIT GHz – 22 ...
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... Fig.5 4 Product specification 100 I (mA amb DC current gain as a function of collector current amb Transition frequency as a function of collector current. BFG31 MBB345 200 MBB347 100 (mA) ...
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... 550 mV amb = 848.25 MHz. Intermodulation distortion as a function of collector current dBmV amb = 810 MHz. Second order intermodulation distortion as a function of collector current. BFG31 MBB349 120 I (mA) C MBB351 90 110 I (mA) C ...
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... Philips Semiconductors PNP 5 GHz wideband transistor PACKAGE OUTLINE handbook, full pagewidth o 16 max 1.80 max Dimensions in mm. 1995 Sep 12 S seating plane 0.32 6.7 0.24 6.3 3.1 2.9 0.10 0. 2.3 max 4.6 Fig.10 SOT223. 6 0.95 0. 3.7 7.3 3.3 6 0.80 0 0.60 (4x) MSA035 - 1 Product specification BFG31 ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1995 Sep 12 7 Product specification BFG31 ...