BFG505 Philips Semiconductors, BFG505 Datasheet
BFG505
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BFG505 Summary of contents
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... DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage BFG505; BFG505/X NPN 9 GHz wideband transistors Product specification Supersedes data of September 1995 M3D071 1998 Oct 02 ...
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... mA; s opt 900 MHz amb = ; 1.25 mA; s opt GHz amb 2 Product specification BFG505; BFG505/X DESCRIPTION BFG505 1 collector collector 2 base emitter 3 emitter base 4 emitter emitter 4 3 handbook, 2 columns 1 2 Top view MSB014 Fig ...
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... Fig.2 Power derating curve. 1998 Oct 02 CONDITIONS open emitter open collector T 130 C; see Fig.2; note 1 s note 1 MRA638-1 150 200 Product specification BFG505; BFG505/X MIN. MAX 2.5 18 150 65 150 175 CONDITIONS VALUE 290 UNIT ...
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... GHz amb mA 900 MHz amb note 2 is zero and amb f = 904 MHz Product specification BFG505; BFG505/X MIN. TYP. MAX 120 250 0.4 0.3 0 1.2 1.7 1.6 2.1 1 ...
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... MRA639 handbook, halfpage (mA) I MRA641 handbook, halfpage (mA MSG = maximum stable gain BFG505; BFG505/X 0 (pF) 0.3 0.2 0 MHz. C Fig.4 Feedback capacitance as a function of collector-base voltage. 25 gain G UM (dB) ...
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... Fig.9 Gain as a function of frequency. 1998 Oct 02 MRA643 handbook, halfpage G max (mA MSG = maximum stable gain; G MRA645 handbook, halfpage G max (MHz BFG505; BFG505/X 50 gain G UM (dB MSG 1.25 mA maximum unilateral power gain maximum available gain ...
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... MHz 1998 Oct 02 MRA651 20 G ass (dB (MHz) pot. unst. 90 region 1 135 0.5 0.2 F min = 1.5 dB 0.2 0 0.2 0.5 135 1 90 Fig.12 Noise circle figure. 7 Product specification BFG505; BFG505/X 1.0 0 0.6 0.4 5 0.2 OPT MRA652 1.0 ...
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... 1.25 mA 2000 MHz 1998 Oct 02 pot. unst. 90 region 1 135 0.5 0.2 F min = 2.5 dB 0.2 0 0.2 0.5 135 1 90 Fig.13 Noise circle figure. 8 Product specification BFG505; BFG505/X 1.0 0 0.6 OPT 0 MRA653 1.0 ...
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... mA Fig.15 Common emitter forward transmission coefficient (S 1998 Oct 135 0.5 0.2 3 GHz 0.2 0 0.2 0.5 135 135 3 GHz 40 MHz 135 90 9 Product specification BFG505; BFG505/X 1.0 0 0.6 0 MHz MRA646 1 MRA647 ). 21 ...
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... mA Fig.17 Common emitter output reflection coefficient (S 1998 Oct 02 90 135 3 GHz 40 MHz 0.20 0.15 0.10 0.05 135 135 0.5 0.2 0.2 0 0.2 3 GHz 0.5 135 Product specification BFG505; BFG505 MRA648 ). 12 1.0 0 0.6 0 MHz MRA649 1 ...
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... SOT143B 1998 Oct scale 0.15 3.0 1.4 1.9 1.7 0.09 2.8 1.2 REFERENCES JEDEC EIAJ 11 Product specification BFG505; BFG505 detail 2.5 0.45 0.55 0.2 0.1 2.1 0.15 0.45 EUROPEAN PROJECTION SOT143B 0.1 ISSUE DATE 97-02-28 ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Oct 02 BFG505; BFG505/X 12 Product specification ...
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... Philips Semiconductors NPN 9 GHz wideband transistors 1998 Oct 02 BFG505; BFG505/X NOTES 13 Product specification ...
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... Philips Semiconductors NPN 9 GHz wideband transistors 1998 Oct 02 BFG505; BFG505/X NOTES 14 Product specification ...
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... Philips Semiconductors NPN 9 GHz wideband transistors 1998 Oct 02 BFG505; BFG505/X NOTES 15 Product specification ...
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... Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel ...