BFG540W Philips Semiconductors, BFG540W Datasheet - Page 3

• Manufacturer Part Number: BFG540W
• Description: NPN 9 GHz wideband transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the “Limiting values” and “Thermal characteristics”
1. T
1997 Dec 04
handbook, halfpage
V
V
V
I
P
T
T
R
SYMBOL
SYMBOL
C
stg
j
CBO
CES
EBO
tot
th j-s
NPN 9 GHz wideband transistor
V
(mW)
P tot
CE
s
600
400
200
is the temperature at the soldering point of the collector pin.
10 V.
0
0
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to soldering point
Fig.3 Power derating curve.
50
PARAMETER
100
PARAMETER
150
T
s
MBG248
( C)
o
open emitter
R
open collector
up to T
BE
200
= 0
s
= 85 C; see Fig.3; note 1
CONDITIONS
3
up to T
CONDITIONS
s
BFG540W/X; BFG540W/XR
= 85 C; note 1
65
MIN.
20
15
2.5
120
500
+150
175
VALUE
Product specification
MAX.
180
BFG540W
V
V
V
mA
mW
C
C
UNIT
UNIT
K/W