BFQ18A Philips Semiconductors, BFQ18A Datasheet - Page 4

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BFQ18A

Manufacturer Part Number
BFQ18A
Description
NPN 4 GHz wideband transistor
Manufacturer
Philips Semiconductors
Datasheet

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Philips Semiconductors
September 1995
handbook, halfpage
handbook, halfpage
NPN 4 GHz wideband transistor
(GHz)
Fig.4
V
f = 40
Fig.2 Intermodulation distortion MATV test circuit.
CE
T f
= 10 V; f = 500 MHz; T
4
8
6
2
0
0
860 MHz.
10 nF
Transition frequency as a function of
collector current.
0.68 pF
10 k
4.7 nF
40
2.2 nF
j
L1
= 25 C.
200
12
80
DUT
10 nF
5 H
5 H
120
I
C
0.68
MBB829
pF
(mA)
MBB357
1.5 nF
2.2 nF
160
R L
V BB
V CC
4
handbook, halfpage
V
Fig.3
h
CE
FE
120
= 10 V; T
80
40
0
0
DC current gain as a function of collector
current.
j
= 25 C.
40
80
Product specification
120
I
C
BFQ18A
MBB361
(mA)
160

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