BF422L Philips Semiconductors, BF422L Datasheet - Page 3

• Manufacturer Part Number: BF422L
• Description: NPN high-voltage transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
Note
1. Pulse test: t
1999 Apr 21
R
I
I
h
V
C
f
amb
CBO
EBO
T
SYMBOL
SYMBOL
FE
CEsat
th j-a
re
NPN high-voltage transistor
= 25 C unless otherwise specified.
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
feedback capacitance
transition frequency
p
300 s;
PARAMETER
PARAMETER
0.02.
I
I
I
I
I
I
I
E
E
C
C
C
C
C
= 0; V
= 0; V
= 0; V
= 25 mA; V
= 30 mA; I
= i
= 10 mA; V
c
3
= 0; V
note 1
CB
CB
EB
CONDITIONS
= 200 V
= 200 V; T
= 5 V
CB
B
CE
CE
= 5 mA; note 1
CONDITIONS
= 30 V; f = 1 MHz
= 20 V
= 10 V; f = 100 MHz 60
amb
= 150 C
50
MIN.
VALUE
200
Product specification
10
10
50
600
1.6
MAX.
BF422L
UNIT
K/W
nA
nA
mV
pF
MHz
UNIT
A