RX1214B170W Philips Semiconductors, RX1214B170W Datasheet - Page 2

• Manufacturer Part Number: RX1214B170W
• Description: Microwave power transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
Intended for use in common-base
class C broadband pulsed power
amplifiers for radar applications in the
1.2 to 1.4 GHz band. Also suitable for
long pulse, heavy duty operation
within this band.
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
SOT439A metal ceramic flange
package, with base connected to
flange.
1997 Feb 18
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
Suitable for short and medium
pulse applications up to 1 ms pulse
width, 10% duty factor
Diffused emitter ballasting resistors
improve ruggedness
Interdigitated emitter-base
structure provides high emitter
efficiency
Gold metallization with barrier
realizes very stable characteristics
and excellent lifetime
Multicell geometry improves power
sharing and reduces thermal
resistance
Internal input and output
prematching networks allow an
easier design of circuits.
Microwave power transistor
ok, 4 columns
QUICK REFERENCE DATA
Microwave performance up to T
narrowband amplifier.
PINNING - SOT439A
Class C
OPERATION
MODE OF
PIN
1
2
3
3
Top view
WARNING
t
collector
emitter
base connected to flange
CONDITIONS
p
2
= 10%
= 500 s;
Fig.1 Simplified outline and symbol.
1
2
mb
1.2 to 1.4
= 25 C in a common base class C
(GHz)
3
f
DESCRIPTION
MAM045
V
(V)
42
CC
b
RX1214B170W
Product specification
(W)
P
170
c
e
L
(dB)
G
6.7
p
(%)
40
C